Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Electrochemical and thermal oxidation of TiN coatings studied by XPS

Abstract: X-ray pbotoelectron spectroscopy (XPS) has been used to investigate the electrochemical and thermal oxidation of titanium nitride (TiN) coatings prepared by physical vapour deposition (PVD) at 200°C. Electrochemical oxidation of TiN was carried out at various potentials in phthalate buffer solution (pH 5.0). Evaluation of the XPS Ti 2p and N 1s spectra showed the presence of nitride, oxynitride and oxide species in the layer formed by anodic oxidation. The electrochemical oxidation of TiN to TiO 2 proceeds through the formation of a mixed oxynitride/oxide layer, which transforms into oxide (TiO 2 ) at sufficiently positive potentials (E > 1.1 V vs. SHE). The oxidation of TiN to TiO 2 is accompanied by the formation of molecular nitrogen (N 2 ). The thickness of the oxide layer reaches ∼ 7 nm after oxidation at the highest potential (1.9 V). A complete coverage of the TiN surface by TiO 2 leads to an anodic peak in the polarization curve. On the basis of angle-resolved XPS measurements, two types of oxynitride species are identified, which are distributed differently throughout the oxidized layer. X-ray photoelectron spectroscopy depth profiles of TiN oxidized at 450°C and 600°C in an oxygen flow reveal that at the lower temperature an oxynitride layer is formed, whereas a thick TiO 2 layer appears on top of TiN at the higher temperature. The interface between the nitride and oxide phases is relatively sharp. It is suggested that the mechanism of TiN oxidation proceeds by a progressive replacement of nitrogen by oxygen. The TiN coatings can be used up to 600°C as a protective coating in an oxygen atmosphere. Valance band spectra of TiN, as well as of electrochemically and thermally oxidized TiN, are presented and discussed.

Surface Plasmon Polaritons and Screened Plasma Absorption in Indium Tin Oxide Compared to Silver and Gold

Abstract: This study addresses the ability of a conducting metal oxide to act as a material capable of supporting surface plasmon polaritons (SPPs). By use of a two-phase Fresnel model that provides insight into the difference between polariton-induced and absorptive decreases in reflectivity, indium tin oxide (ITO) is compared to the noble metals gold and silver, which are widely used as materials for surface plasmon resonance (SPR) detection of analytes. The study builds on application of the Drude free electron model that provides an explanation for the observed optical extinctions as a function of ITO film thickness, including the dependence of wavenumber on angle, by use of only two adjustable parameters, the plasma frequency ωp and the damping Γ. Herein, models of the dispersion and absorption include both the real and imaginary parts of the dielectric function to obtain the plasma absorption spectra and dispersion curves for ITO, Ag, and Au. ITO is found to have surface plasmon dispersion curves and plasma a...

Photoelectrochemical Behavior of Electrodeposited CuO and Cu2 O Thin Films on Conducting Substrates

Abstract: Cuprous oxide has been prepared by the photoelectrochemical reduction of a CuO film formed on a conducting substrate by the anodic deposition from an alkaline solution of a Cu(II)-amino acid complex Both copper oxide films thus prepared are found to be typical p-type semiconductors The onset of the cathodic photocurrent due to the reduction of O 2 on CuO/ITO (ITO, indium tin oxide) and Cu 2 O/ITO electrodes give positive shifts of about 02 and 003 V, respectively, from the dark current rises Optical bandgap energies of CuO films depend on the amino acids used, 156 (glycine), 140 (alanine), 138 (isoleucine), 138 eV (valine), and the value of Eg for the Cu 2 O film is 217 eV The relationship between the flatband potential (V FB ) and the pH for CuO and Cu 2 O films are both linear with the slope of about -60 mV/pH in agreement with the Nernstian expression for the V FB of a semiconductor

Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

Abstract: We report the demonstration of CW lasing at room temperature in a GaN-based vertical-cavity surface-emitting laser (VCSEL) by current injection. The active region of the VCSEL consisted of a two-pair InGaN/GaN quantum well active layer. The optical cavity consisted of a 7-λ-thick GaN semiconductor layer and an indium tin oxide layer for p-contact embedded between two SiO2/Nb2O5 dielectric distributed Bragg reflectors. The VCSEL was mounted on a Si substrate by wafer bonding and the sapphire substrate was removed by laser lift-off. Under CW operation for an 8-µm aperture device, the threshold current was 7.0 mA and the emission wavelength was approximately 414 nm.