Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Solution-Processed Metallic Nanowire Electrodes as Indium Tin Oxide Replacement for Thin-Film Solar Cells

Abstract: Solution processed silver nanowire (Ag NW) films are introduced as transparent electrodes for thin-film solar cells. Ag NW electrodes were processed by doctor blade-coating on glass substrates at moderate temperatures (less than 100 °C). The morphological, optical, and electrical characteristics of these electrodes were investigated as a function of processing parameters. For solar-cell application, Ag NW electrodes with an average transparency of 90% between 450 and 800 nm and a sheet resistivity of ≈10 Ω per square were chosen. The performance of poly(3-hexylthiophen-2,5-diyl):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) solar cells on Ag NW electrodes was found to match the performance of otherwise identical cells on indium tin oxide. Overall, P3HT:PCBM solar cells with an efficiency of 2.5% on transparent Ag NW electrodes have been realized.

A Self‐Powered and Stable All‐Perovskite Photodetector–Solar Cell Nanosystem

Abstract: Hybrid organic–inorganic perovskites have attracted intensive interest as light absorbing materials in solid-state solar cells. Herein, we demonstrate a high-performance CH3NH3PbI3-based perovskite photodetector constructed on the flexible indium tin oxide (ITO) coated substrate even after 200 bending cycles. The as-fabricated devices show high responsivity, broad spectrum response from ultraviolet to whole visible light, long-term stability, and high on-off ratio. Particularly, atomic layer deposition technique was used to deposit the ultrathin Al2O3 film on devices, functioning as a protection layer to effectively enhance the stability and durability of perovskite photodetectors. The first all-perovskite self-powered nanosystem was successfully assembled by integrating a perovskite solar cell with a perovskite photodetector. Driven by the perovskite solar cell, the photodetector exhibits fast and stable response to illuminated light at a low working voltage less than 1.0 V. This stable integrated nanosystem has promising applications in which photodetectors can work in harsh environments without external power sources.

Highly Efficient Oxidation of Water by a Molecular Catalyst Immobilized on Carbon Nanotubes

Abstract: A successful team: A molecular device based on multiwalled carbon nanotubes functionalized by a mononuclear ruthenium catalyst has been shown to split water electrochemically (see picture; ITO=indium tin oxide). The readily prepared electrode showed excellent electrocatalytic activity for the oxidation of water, a high current density, and a low overpotential, and constitutes one step forward in the design of artificial photosynthetic systems.

Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

Abstract: During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm2/V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VTi (intrinsic threshold voltage).