Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Abstract: Accumulating electrons in transparent conductive oxides such as indium tin oxide (ITO) can induce an ”epsilon-near-zero” (ENZ) in the spectral region near the important telecommunications wavelength of λ = 1.55μm. Here we theoretically demonstrate highly effective optical electro-absorptive modulation in a silicon waveguide overcoated with ITO. This modulator leverages the combination of a local electric field enhancement and increased absorption in the ITO when this material is locally brought into an ENZ state via electrical gating. This leads to large changes in modal absorption upon gating. We find that a 3 dB modulation depth can be achieved in a non-resonant structure with a length under 30 μm for the fundamental waveguide modes of either linear polarization, with absorption contrast values as high as 37. We also show a potential for 100 fJ/bit modulation, with a sacrifice in performance.

Solution-Processed Flexible Transparent Conductors Composed of Silver Nanowire Networks Embedded in Indium Tin Oxide Nanoparticle Matrices

Abstract: Although silver nanowire meshes have already demonstrated sheet resistance and optical transmittance comparable to those of sputter-deposited indium tin oxide thin films, other critical issues including surface morphology, mechanical adhesion and flexibility have to be addressed before widely employing silver nanowire networks as transparent conductors in optoelectronic devices. Here, we demonstrate the efficacy of low temperature solution-processed flexible metal nanowire networks embedded in a conductive metal oxide nanoparticle matrix as transparent conductors, and investigate their microstructural, optoelectronic, and mechanical properties in attempting to resolve nearly all of the technological issues imposed on silver nanowire networks. Surrounding silver nanowires by conductive indium tin oxide nanoparticles offers low wire to wire junction resistance, smooth surface morphology, and excellent mechanical adhesion and flexibility while maintaining the high transmittance and the low sheet resistance. In addition, we discuss the relationship between sheet resistance and transmittance in the silver nanowire composite transparent conductors and their maximum achievable transmittance. Although we have selected silver nanowires and indium tin oxide nanoparticle matrix as demonstration materials, we anticipate that various metal nanowire meshes embedded in various conductive metal oxide nanoparticle matrices can effectively serve as transparent conductors for a wide variety of optoelectronic devices owing to their superior performance, simple, cost-effective, and gentle processing.

Indium-tin oxide thin films prepared by chemical vapor deposition

Abstract: Transparent conductive indium‐tin oxide thin films were prepared by an atmospheric‐pressure chemical vapor deposition method. The source materials were indium acetylacetonate and tin (II) acetylacetonate which are nontoxic and easy to handle. The polycrystalline films were obtained at a reaction temperature in the range of 350–500 °C. For the 215‐nm‐thick film deposited at 450 °C, the resistivity was 1.8 × 10−4 Ω cm, and the transmittance was more than 90% in the wave number range of above 400 nm. The atomic ratio Sn/In of the film was 0.031. The effects of tin doping on the structure and characteristics of the film were discussed on the basis of the carrier concentration and mobility which were measured by using the Hall effect.

The origin of the hole injection improvements at indium tin oxide/ molybdenum trioxide/N,N' -bis(1-naphthyl)-N,N' -diphenyl-1,1' '-biphenyl-4,4'-diamine interfaces

Abstract: We investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance.