Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
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TL;DR: In this paper, a spray pyrolysis technique was used to synthesize transparent conductive FTO, ATO and ITO films on flat 12×12 cm borosilicate glass substrates at 500-550°C and investigated with respect to their electrical and optical properties.
153 citations
TL;DR: In this article, the effect of heat treatment in various environments on the structural, electrical, and optical properties of indium tin oxide films was investigated for the first time, and the effects of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films were reported for the very first time.
Abstract: Indium tin oxide films have been grown by rf sputtering at various Ar‐O2 mixtures, at low substrate temperatures (200 °C), and deposition rates (25 A/min), followed by post deposition annealing (at 350 °C) in different ambients (O2, N2, and cracked ammonia). Influence of a reactive gas (oxygen) on the sputtering rate of a metallic (indium/tin) alloy target has been investigated. Growth parameters and annealing conditions have been optimized. The films were characterized by electron and x‐ray diffraction, scanning electron microscopy, and transmittance as a function of wavelength. The effect of heat treatment in various environments on the structural, electrical, and optical properties has been investigated. Effect of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films is being reported for the first time. Cracked ammonia was found to be very effective and cheap and resulted in films of high quality (electrical and optical) with good structural properties...
152 citations
TL;DR: In this paper, a Cu(InAl)Se2 solar cell with 16.9% efficiency was demonstrated using a thin film deposited by four-source elemental evaporation.
Abstract: A Cu(InAl)Se2 solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2 thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through trap states in the space charge region in the Cu(InAl)Se2 or Cu(InGa)Se2 layer.
152 citations
TL;DR: In this article, the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates was used to improve the performance of indium tin oxide (ITO)/indium phosphide solar cells.
Abstract: Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.
152 citations
TL;DR: In this article, a reduced graphene oxide/tin oxide composite is prepared by homogenous coprecipitation, which can be readily adapted to other composites containing reduced graphene dioxide as a conducting additive that, in addition to supporting metal oxide nanoparticles, can also provide additional Li binding sites to enhance capacity.
152 citations