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Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.


Papers
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Journal ArticleDOI
TL;DR: In this article, a Pb-assisted two-step method is successfully proposed to fabricate high-quality CH3NH3Sn0.5Pb0.3) perovskite film on the indium tin oxide (ITO) glass/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) substrate.
Abstract: In the present work, a Pb-assisted two step method is successfully proposed to fabricate high-quality CH3NH3Sn0.5Pb0.5I3 (MASn0.5Pb0.5I3) perovskite film on the indium tin oxide (ITO) glass/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) substrate. The film shows regular crystalline grains with a flat and compact morphology as well as full coverage on the planar PEDOT:PSS substrate. Remarkably, corresponding devices ITO/PEDOT:PSS/MASn0.5Pb0.5I3/C60/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline/Ag are fabricated with high reproducibility, achieving a high power conversion efficiency of 13.6%, which is, to the best of knowledge, the most efficient solar cell based on Sn-based perovskite.

148 citations

Journal ArticleDOI
TL;DR: In this article, the indium tin oxide films sputtered on to p-silicon using ion-beam techniques and showed significant photovoltaic effects when exposed to sunlight.
Abstract: Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

148 citations

Journal ArticleDOI
TL;DR: In this paper, electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method are presented.
Abstract: We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.

147 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present a theoretical characterization of the indium tin oxide surface and the nature of the binding sites that determine the adsorption of phosphonic acid monolayers.
Abstract: We present a theoretical characterization, based on density functional theory, of the indium tin oxide surface and of the nature of the binding sites that determine the adsorption of phosphonic acid monolayers. The validity of our theoretical description is assessed by comparing our first-principles results to X-ray photoelectron spectroscopy data.

147 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023343
2022730
2021537
2020684
2019804
2018838