Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
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TL;DR: It is reported that bulk-separated metallic single-walled carbon nanotubes offer superior performance in conductive composites with poly(3-hexylthiophene) and also in transparent conductive coatings based on PEDOT:PSS.
Abstract: This article reports an unambiguous demonstration that bulk-separated metallic single-walled carbon nanotubes offer superior performance (consistently and substantially better than the as-produced nanotube sample) in conductive composites with poly(3-hexylthiophene) and also in transparent conductive coatings based on PEDOT:PSS. The results serve as a validation on the widely held view that the carbon nanotubes are competitive in various technologies currently dominated by conductive inorganic materials (such as indium tin oxide).
147 citations
TL;DR: In this paper, a method to synthesize ultra-large-scale (30 inch) graphene films using roll-to-roll transfer and chemical doping processes was developed that shows excellent electrical and physical properties suitable for practical applications on a large scale.
Abstract: Since the first isolation of graphene in 2004 by mechanical exfoliation from graphite, many people have tried to synthesize large-scale graphene using various chemical methods. In particular, there has been a great number of advances in the synthesis of graphene using chemical vapor deposition (CVD) on metal substrates such as Ni and Cu. Recently, a method to synthesize ultra-large-scale ( 30 inch) graphene films using roll-to-roll transfer and chemical doping processes was developed that shows excellent electrical and physical properties suitable for practical applications on a large scale. Considering the outstanding scalability/processibility of roll-to-roll and CVD methods as well as the extraordinary flexibility/conductivity of graphene films, we expect that transparent graphene electrodes can replace indium tin oxide in the near future.
146 citations
TL;DR: In this paper, the kinetics of Li2S deposition from polysulfide solutions of 1-7 M S concentration onto carbon and two conductive oxides (indium tin oxide, ITO; and aluminum-doped zinc oxide, AZO) were characterized.
Abstract: Lithium-sulfur batteries obtain most of their capacity from the electrodeposition of Li2S. This is often a slow process, limiting the rate capability of Li-S batteries. In this work, the kinetics of Li2S deposition from polysulfide solutions of 1–7 M S concentration onto carbon and two conductive oxides (indium tin oxide, ITO; and aluminum-doped zinc oxide, AZO) were characterized. Higher polysulfide concentrations were found to result in significantly slower electrodeposition, with island nucleation and growth rates up to 75% less than at low concentrations. Since Li-S batteries with low electrolyte/sulfur (E/S) ratios necessarily reach higher polysulfide concentrations during use, the present results explain why high polarization and low rate capability are observed under such conditions. Given that low E/S ratios are critical to reach high energy density, means to improve electrodeposition kinetics at high polysulfide concentrations are necessary. Towards this goal, coatings of ITO and AZO on carbon fiber current collectors were found to improve island growth rates at 5 M by up to ~60%. Of the two oxides, AZO was found to be superior in reducing the electrodeposition overpotential. Its benefits were demonstrated for carbon fiber current collectors coated with AZO and for conductive suspensions incorporating carbon black and nanoparticle AZO.
146 citations
TL;DR: Graphene/polyaniline (PANI) multilayer films were prepared via alternate deposition of negatively charged graphene oxide (GO) and positively charged PANI upon electrostatic interaction, followed by the reduction of their GO components with hydroiodic acid.
145 citations
TL;DR: In this article, the authors have developed a theory in terms of minority-carrier tunnel current transport through the interfacial layer where one semiconductor is in a nonequilibrium mode.
Abstract: Recently 12% efficient indium tin oxide (ITO) on silicon solar cells have been reported. Experiments indicate the presence of a thin interfacial insulating layer. Thus, these devices appear to belong to a class of semiconductor‐insulator‐semiconductor (SIS) solar cells where one of the semiconductors is a degenerate wide‐band‐gap oxide. We have developed a theory in terms of minority‐carrier tunnel current transport through the interfacial layer where one semiconductor is in a nonequilibrium mode. The wide‐band‐gap semiconductor serves to block band‐to‐band majority‐carrier current and thus, in principle, give better device performance than with an MIS solar cell. The effects of interfacial layer thickness, substrate doping level, surface states and interface charge, temperature on the performance of SIS solar cells have been calculated. These indicate that real‐world ITO on silicon cells should be able to achieve 20% efficiency under AMl illumination. Other combinations of semiconductors would yield even...
145 citations