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Induced high electron mobility transistor
About: Induced high electron mobility transistor is a research topic. Over the lifetime, 1294 publications have been published within this topic receiving 36263 citations.
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TL;DR: In this paper, a perovskite-type SrTiO3 single crystal is used as the semiconducting channel for an n-type accumulation mode field effect transistor.
Abstract: A field-effect transistor has been constructed that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel. This device functions as an n-type accumulation-mode device. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect (FE) mobility is 0.1 cm2/V s and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV.
1,045 citations
TL;DR: In this paper, the field effect mobility in an organic thin-film transistor was studied theoretically. And the authors applied the theory to describe the experiments by Brown et al. on solution-processed amorphous organic transistors, made from polythienylene vinylene and from a small molecule (pentacene).
Abstract: The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, with respect to both the gate voltage and the temperature dependence of the mobility.
779 citations
TL;DR: In this article, the authors explored the charge-carrier transport mechanism in the organic semiconductor pentacene using thin-film transistor structures and found that the variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior.
Abstract: The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials.
768 citations
TL;DR: In this article, a high electron mobility transistor (HEMT) with extremely high-speed microwave capabilities is reported, which is based on a field effect transistor (FE transistor).
Abstract: Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-AlxGa1-x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.
741 citations
TL;DR: In this paper, the authors fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration.
Abstract: We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.
640 citations