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Inductor

About: Inductor is a research topic. Over the lifetime, 52565 publications have been published within this topic receiving 484068 citations. The topic is also known as: passive two terminal.


Papers
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Journal ArticleDOI
TL;DR: A novel nonisolated single-input dual-output three-level dc–dc converter appropriate for medium- and high-voltage applications and shows very good stability, even under simultaneous step changes of the loads and input voltage.
Abstract: This paper proposes a novel nonisolated single-input dual-output three-level dc–dc converter (SIDO-TLC) appropriate for medium- and high-voltage applications. The SIDO-TLC is an integration of the three-level buck and boost converters, whose output voltages are regulated simultaneously. Reducing voltage stress across semiconductor devices, improving efficiency, and reducing inductors size are among the main merits of the new topology. Moreover, due to the considerably reduced volume of the step-down filter capacitor, a small film capacitor can be used instead, whose advantages are lower equivalent series resistance and a longer lifespan. A closed-loop control system has been designed based on a small-signal model derivation in order to regulate the output voltages along with the capacitors’ voltage balancing. In order to verify the theoretical and simulation results, a 300-W prototype was built and experimented. The results prove the aforementioned advantages of the SIDO-TLC, and the high effectiveness of the balancing control strategy. Furthermore, the converter shows very good stability, even under simultaneous step changes of the loads and input voltage.

99 citations

Journal ArticleDOI
TL;DR: In this paper, the authors describe the design, test data, and analysis of several circular spiral inductors fabricated on GaAs substrates using the multifunction self-aligned gate multilayer process.
Abstract: In this paper, we describe the design, test data, and analysis of several circular spiral inductors fabricated on GaAs substrates using the multifunction self-aligned gate multilayer process. Various factors such as high inductance, high-quality and, high current handling capacity, and compactness are studied. Several configurations for inductors were investigated to optimize the inductor geometry such as the linewidth, spacing between the turns, conductor thickness, and inner diameter. It includes measured effects of various parameters on inductor performance, such as linewidth, spacing, inner diameter, metal thickness, underlying dielectric, and dielectric thickness. It is shown experimentally that the Q factor of spiral inductors can be enhanced by using 9-/spl mu/m-thick metallization and placing inductors on a 10-/spl mu/m-thick polyimide layer, which is placed on top of the GaAs substrate. Using this technique, we have observed up to 93% improvement in the Q factor of circular spiral inductors, as compared to standard spiral inductors fabricated on GaAs substrates. Inductors having thick metallization can also handle dc currents as large as 0.6 A.

99 citations

Journal ArticleDOI
TL;DR: The radiofrequency power coupling efficiency of a planar induction source is determined by measurement of the power dissipated in the matching network and inductive coupler as mentioned in this paper, and the efficiency is highest when the plasma-to-inductor distance is least since the increased mutual inductance reduces the radiofrequency inductor current and, hence, ohmic losses.
Abstract: The radiofrequency power coupling efficiency of a planar induction source is determined by measurement of the power dissipated in the matching network and inductive coupler. Typically one finds the radiofrequency current to vary between 20 and 60 A (root mean square). The equivalent resistance of the coupling network is determined to be 0.09 Omega , and power coupling efficiency to the plasma is therefore found to be 70-90% with the remaining power lost to ohmic heating of the circuit elements. The efficiency is highest when the plasma-to-inductor distance is least since the increased mutual inductance reduces the radiofrequency inductor current and, hence, ohmic losses. Efficiency of power coupling is nearly constant as a function of radiofrequency power between 200 and 2000 W. Somewhat larger currents are required to sustain a discharge at lower pressures (about 1 mTorr) or when the plasma is not magnetically confined, giving rise to lower coupling efficiencies.

99 citations

Journal ArticleDOI
TL;DR: In this article, a robust micromachined spiral inductor with a cross-shaped sandwich membrane support is proposed and fabricated with fully CMOS compatible post-processes for radio frequency integrated circuit (RFIC) applications.
Abstract: In this paper, a robust micromachined spiral inductor with a cross-shaped sandwich membrane support is proposed and fabricated with fully CMOS compatible post-processes for radio frequency integrated circuit (RFIC) applications. Using the incorporation of a sandwich dielectric membrane (0.7 /spl mu/m SiO/sub 2//0.7 /spl mu/m Si/sub 3/N/sub 4//0.7 /spl mu/m TEOS) to enhance the structure rigidity, the inductor can have better signal stability. In comparison, the new design of a /spl sim/5-nH micromachined inductor can have 45% less inductance variation than the one without the dielectric support while both devices are operated with 10 m/s/sup 2/ acceleration. Meanwhile, using a cross shape instead of blanket membrane can also effectively eliminate the inductance variation induced by the working temperature change (20/spl deg/C to 75/spl deg/C). The measurement results show the robust inductor can have similar electrical performance to the as-fabricated freely suspended inductor, which has five times Q (quality factor) improvement than the inductor without the substrate removal. It is our belief that the new micromachined inductors can have not only high-Q performance but also better signal stability suitable for wide-range RFIC applications.

99 citations

Proceedings ArticleDOI
15 Feb 1998
TL;DR: In this article, a DC-DC power converter for use with low voltage microprocessor loads is described, and the control method is a hysteretic current-mode control in the continuous conduction mode which has fast transient response.
Abstract: The paper describes a DC-DC power converter for use with low voltage microprocessor loads. The control method is a hysteretic current-mode control in the continuous conduction mode which has fast transient response. At light loads, the power converter operates in the discontinuous conduction mode using a peak current control method which causes the switching frequency to be proportional to load current, thus maintaining high efficiency in a very wide range of loads. The control method implementation, transient response and output inductor design equations, and equations for designing an input filter to reduce input current di/dt are provided. An inductor current estimator which provides higher efficiency, good transient response, and current limiting, is presented. Experimental results for a 5.0 V input, 3.1 V output, 13 A DC-DC converter are included to verify the theoretical information.

99 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023985
20222,105
20211,507
20202,637
20193,217
20183,173