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Inductor

About: Inductor is a research topic. Over the lifetime, 52565 publications have been published within this topic receiving 484068 citations. The topic is also known as: passive two terminal.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors studied the effect of damping on power optimality of a piezoelectric vibration-based energy harvester, which utilizes a harvesting circuit employing an inductor and a resistive load.

314 citations

Journal ArticleDOI
TL;DR: In this paper, an improved Z-source inverter topology is proposed to suppress the inrush surge and the resonance of Zsource capacitors and inductors, and the operation principle of the proposed topology and comparison with the traditional topology are analyzed.
Abstract: This paper proposes an improved Z-source inverter topology. Compared to the traditional Z-source inverter, it can reduce the Z-source capacitor voltage stress significantly to perform the same voltage boost, and has inherent limitation to inrush current at startup. The control strategy of the proposed Z-source inverter is exactly the same as the traditional one, so all the existing control strategy can be used directly. A soft-start strategy is also proposed to suppress the inrush surge and the resonance of Z-source capacitors and inductors. The operation principle of the proposed topology and comparison with the traditional topology are analyzed in detail. Simulation and experimental results are given to demonstrate the new features of the improved topology.

314 citations

Journal ArticleDOI
Bin Gu1, Jason Dominic1, Jih-Sheng Lai1, Chien-Liang Chen1, Thomas LaBella1, Baifeng Chen1 
TL;DR: In this article, a high-reliability single-phase transformerless grid-connected inverter that utilizes superjunction MOSFETs to achieve high efficiency for photovoltaic applications is presented.
Abstract: This paper presents a high-reliability single-phase transformerless grid-connected inverter that utilizes superjunction MOSFETs to achieve high efficiency for photovoltaic applications. The proposed converter utilizes two split ac-coupled inductors that operate separately for positive and negative half grid cycles. This eliminates the shoot-through issue that is encountered by traditional voltage source inverters, leading to enhanced system reliability. Dead time is not required at both the high-frequency pulsewidth modulation switching commutation and the grid zero-crossing instants, improving the quality of the output ac-current and increasing the converter efficiency. The split structure of the proposed inverter does not lead itself to the reverse-recovery issues for the main power switches and as such superjunction MOSFETs can be utilized without any reliability or efficiency penalties. Since MOSFETs are utilized in the proposed converter high efficiency can be achieved even at light load operations achieving a high California energy commission (CEC) or European union efficiency of the converter system. It also has the ability to operate at higher switching frequencies while maintaining high efficiency. The higher operating frequencies with high efficiency enables reduced cooling requirements and results in system cost savings by shrinking passive components. With two additional ac-side switches conducting the currents during the freewheeling phases, the photovoltaic array is decoupled from the grid. This reduces the high-frequency common-mode voltage leading to minimized ground loop leakage current. The operation principle, common-mode characteristic and design considerations of the proposed transformerless inverter are illustrated. The total losses of the power semiconductor devices of several existing transformerless inverters which utilize MOSFETs as main switches are evaluated and compared. The experimental results with a 5 kW prototype circuit show 99.0% CEC efficiency and 99.3% peak efficiency with a 20 kHz switching frequency. The high reliability and efficiency of the proposed converter makes it very attractive for single-phase transformerless photovoltaic inverter applications.

307 citations

Journal ArticleDOI
20 Jun 1994
TL;DR: In this paper, a zero-voltage and zero-current-switching (ZVZCS) full-bridge (FB) PWM converter is proposed to overcome the limitations of the ZVS-FB-PWM converter such as high circulating energy, loss of duty cycle, and limited ZVS load range for the lagging-leg switches.
Abstract: A novel zero-voltage and zero-current-switching (ZVZCS) full-bridge (FB) pulse-width modulated (PWM) converter is proposed. The new converter overcomes the limitations of the zero-voltage-switching (ZVS)-FB-PWM converter, such as high circulating energy, loss of duty cycle, and limited ZVS load range for the lagging-leg switches. By using the DC blocking capacitor and adding a saturable inductor, the primary current during the freewheeling period is reduced to zero, allowing the lagging-leg switches to be operated with zero-current-switching (ZCS). Meanwhile, the leading-leg switches are still operated with ZVS. The new converter is attractive for high-voltage (400-800 V), high-power (2-10 kW) applications where IGBTs are predominantly used as the power switches. The principle of operation, features, and design considerations of the new converter are described and verified on a 2-kW, 100-kHz, IGBT-based experimental circuit.

307 citations

Journal ArticleDOI
TL;DR: A comparison of on-chip inductors with magnetic materials from previous studies is presented and examined in this article, where the inductors use copper metallization and amorphous Co-Zr-Ta magnetic material.
Abstract: A comparison of on-chip inductors with magnetic materials from previous studies is presented and examined. Results from on-chip inductors with magnetic material integrated into a 90 nm CMOS processes are presented. The inductors use copper metallization and amorphous Co-Zr-Ta magnetic material. Inductance densities of up to 1700 nH/mm2 were obtained thanks to inductance increases of up to 31 times, significantly greater than previously published on-chip inductors. With such improvements, the effects of eddy currents, skin effect, and proximity effect become clearly visible at higher frequencies. Co-Zr-Ta was chosen for its good combination of high permeability, good stability at high temperature (> 250degC), high saturation magnetization, low magnetostriction, high resistivity, minimal hysteretic loss, and compatibility with silicon technology. The Co-Zr-Ta alloy can operate at frequencies up to 9.8 GHz, but trade-offs exist between frequency, inductance, and quality factor. Our inductors with thick copper and thicker magnetic films have dc resistances as low as 0.04 Omega, and quality factors of up to 8 at frequencies as low as 40 MHz.

306 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023985
20222,105
20211,507
20202,637
20193,217
20183,173