scispace - formally typeset
Search or ask a question

Showing papers on "Injection locking published in 1973"


Journal ArticleDOI
K. Kurokawa1
01 Oct 1973
TL;DR: Injection locking of microwave solid-state oscillators is discussed in this article, based on the familiar theorem that the total impedance times the current is equal to the applied voltage, based on which the locking range, large-signal injection, locking stability, and AM and FM noise are analyzed.
Abstract: Injection locking of microwave solid-state oscillators is discussed, based on the familiar theorem that the total impedance times the current is equal to the applied voltage. Both quasi-static and dynamic analyses of the locking range, large-signal injection, locking stability, and AM and FM noise are given, and recent experimental work is reviewed briefly. No applications of injection locking are discussed in detail.

654 citations


Journal ArticleDOI
01 Oct 1973
TL;DR: In this paper, the basic principles of laser injection locking are discussed and the status of recent experimental work is reviewed, by means of appropriate lower frequency and microwave injection-locking circuits.
Abstract: The basic principles of laser injection locking are discussed and the status of recent experimental work is reviewed. The subject is introduced by means of appropriate lower frequency and microwave injection-locking circuits. These are used to explore the basic physical phenomena involved and to illustrate the essential role of gain saturation in laser injection locking. Oscillators and below-threshold regenerative amplifiers are discussed to provide a more complete and cohesive picture. Experimental results with a variety of CW and quasi-CW injection-locked amplifiers including unstable resonator geometries are presented. Preliminary results with a novel injection-locked passively Q-switched CO 2 amplifier are also given.

163 citations



Journal ArticleDOI
TL;DR: In this article, a theory for Doppler signal detection with a negative-resistance diode oscillator operating simultaneously as a signal source and detector is presented. The theory is based on a realistic model of the oscillator, including an object passing in front of an antenna, and includes the previous treatments as the limiting cases.
Abstract: A theory is presented for the Doppler signal detection with a negative-resistance diode oscillator operating simultaneously as a signal source and Doppler signal detector. The theory is based on a realistic model of the oscillator, including an object passing in front of an antenna, and includes the previous treatments as the limiting cases. The effect of the bias circuit taking out the Doppler signal on the RF operation of the oscillator is taken into account self-consistently. The frequency down-conversion with a free-running oscillator is also investigated. Conversion gain is demonstrated by the experiment using a Gunn oscillator with a movable load.

27 citations


Journal ArticleDOI
R. Smith1
TL;DR: In this paper, the authors used the deflected beam from a Bragg deflector to ensure the stability of a laser when the frequency of the acoustic wave is chosen such that the frequency(ies) of the light reentering the laser, shifted by twice the acoustic frequency from the light leaving the laser leaving, does not correspond to a cavity resonance.
Abstract: In many uses of lasers, the minimization or elimination of power reentering the laser is necessary to ensure its stability It is pointed out here that the frequency-shifting properties of an acoustooptic light deflector can be used for this purpose By using the deflected beam from a Bragg deflector, stability of the laser is obtained when the frequency of the acoustic wave is chosen such that the frequency(ies) of the light reentering the laser, shifted by twice the acoustic frequency from the light leaving the laser, does not correspond to a cavity resonance Experimental results demonstrating this isolation property are presented and are found to be in general agreement with other results of injection locking of lasers

21 citations


Patent
16 Jul 1973
TL;DR: In this article, an electric clock having an electromagnetically operated mechanical oscillator with actuating coil means and a magnet on the mechanical oscillators cooperating with said coil means is presented.
Abstract: An electric clock having an electromagnetically operated mechanical oscillator with actuating coil means and a magnet on the mechanical oscillator cooperating with said coil means. The natural frequency of the electromagnetical oscillator is double the rated frequency of an alternating current network. A transmitter connected to the network transmits a carrier wave at a supersonic frequency which is modulated by the network at double the network frequency. A receiver at the clock receives and demodulates the carrier wave and supplies the pulses to the coil of the mechanical oscillator. An electrical oscillating circuit at the clock is connected to the coil of the mechanical oscillator and a control arrangement disables the electric oscillator when the pulses derived from the carrier wave coincide in frequency with the natural frequency of the mechanical oscillator by enabling the electric oscillator when the network frequency departs a predetermined amount from the natural frequency of the mechanical oscillator.

17 citations


Journal ArticleDOI
TL;DR: In this article, the basic properties of subharmonic injection locking, as well as differences between sub-harmonic and fundamental injection locking with the describing function technique, are studied.
Abstract: Basic properties of subharmonic injection locking, as well as differences between subharmonic and fundamental injection locking, are studied with the describing function technique. The consequences of including a nonlinear capacitance as well as linear frequency-dependent parameters in the active element is investigated. The importance of the broad-band characteristics of the tuning circuit is studied. The detailed analysis is given for locking to the third subharmonic, but necessary expressions for generalizing the treatment to other than third subharmonic locking are provided. Finally, a note on stability of subharmonic locking is given.

12 citations


Proceedings ArticleDOI
04 Jun 1973
TL;DR: In this paper, the theory and operation of a novel new oscillator consisting of a Transferred Electron Oscillator (Gunn Diode) in a moderate Q cavity transmission stabilized with a TE/sub 011/ resonator at X-band is presented.
Abstract: The theory and operation of a novel new oscillator is presented. The F.M. Noise at X-band is less than .3 Hz rms in a 100 Hz bandwidth while the carrier stability is that of a high quality Quartz oscillator. The oscillator consists of a Transferred Electron Oscillator (Gunn Diode) in a moderate Q cavity transmission stabilized with a TE/sub 011/ resonator at X-band. A low level signal is injected between the oscillator cavity and the stabilizing cavity to synchronize the X-band oscillation with a harmonic of a 100 MHz Quartz oscillator. The locking power is sufficient to hold synchronization for tens of minutes without significantly degrading the F.M. noise of the system. The oscillator system has made possible several break-throughs in frequency and time measurements.

12 citations


Journal ArticleDOI
TL;DR: In this article, a simple rule for the determination of the locking region of an oscillator with a general tuning circuit is presented, based on a simple tuning circuit and a simple linear model.
Abstract: A simple rule is presented for the determination of the locking region of an oscillator with a general tuning circuit.

9 citations


Journal ArticleDOI
TL;DR: When an injection-locked oscillator is used to amplify a frequency division multiplexing-frequency modulation FDM-FM signal, second- and third-order distortions are found to exist.
Abstract: When an injection-locked oscillator is used to amplify a frequency division multiplexing-frequency modulation FDM-FM signal, second- and third-order distortions are found to exist. Explicit expressions are derived that give the signal-to-distortion ratio (NPR) as a function of the locking bandwidth, frequency offset, and various modulation parameters. These formulas are believed to be valid within the limits of the assumptions made.

8 citations


Patent
23 Aug 1973
TL;DR: In this article, the authors present a broadband injection-tuned Gunn diode microwave oscillator module with an evanescent mode waveguide and a microwave resonant cavity, where the cavity is modified by an injection locking signal which modifies the impedance of the cavity to match the diode over a specified frequency band.
Abstract: This relates to a broadband injection-tuned Gunn diode microwave oscillator module. The module includes a Gunn diode and a microwave resonant cavity. The resonant cavity is a multi-tuned circuit to present the Gunn diode with its negative impedance over the requisite frequency band. The cavity is an evanescent mode waveguide. Tuning is accomplished solely by an injection locking signal which modifies the impedance of the cavity to match the Gunn diode over the requisite frequency band. This type of tuning eliminates the need for either electronic tuning of the Gunn diode and/or mechanical tuning of the cavity.

Journal ArticleDOI
TL;DR: In this paper, conditions for the measurement of the external Q factor of microwave oscillators by use of frequency pulling or locking techniques were identified for a small modification to a technique proposed previously for frequency locking.
Abstract: Conditions are identified for the measurement of the external Q factor of microwave oscillators by use of frequency pulling or locking techniques. A small modification to a technique proposed previously for frequency locking is derived, and is extended to the case of frequency pulling. It is shown that measurements of the full locking or pulling bandwidths give information on the first derivatives, with respect to r.f.-voltage amplitude, of the device susceptance and conductance.

Journal ArticleDOI
TL;DR: In this article, experimental results of the nonlinear behavior of an IMPATT diode oscillator under free-running and bias-modulated conditions are presented and correlated with theoretical results.
Abstract: Experimental results of the nonlinear behavior of an IMPATT diode oscillator under free-running and bias-modulated conditions are presented and correlated with theoretical results. Amplitude and frequency behavior of a free-running IMPATT diode oscillator such as: 1) power-frequency characteristic, 2) jump and hysteresis, 3) temperature dependence, 4) harmonic content, and 5) electronic tuning characteristics are discussed. The bias-modulation properties and their relation to the free-running behavior are described. The effects of the operating point, external Q, and injection locking on the modulation properties are presented.

Patent
17 Aug 1973
TL;DR: In this article, a stabilized solid-state oscillator consisting of a free running oscillator with its frequencies made variably by a variable reactance element, a high-Q fundamental cavity resonator coupled to the output line of the free-running oscillator for controlling the oscillation frequency by phase locking and a diode phase detector coupled with the same output line is characterized.
Abstract: A stabilized solid-state oscillator comprising a free running oscillator with its frequencies made variably by a variable reactance element, a high-Q fundamental cavity resonator coupled to the output line of the free running oscillator for controlling the oscillation frequency by phase locking and a diode phase detector coupled with the same output line; characterized in that variations of the oscillation frequency are detected as the amount of phase variations of the wave reflected from the fundamental cavity resonator, so that frequency variations of the free running oscillator are restricted by an AFC circuit.

Patent
Standke W1, Walters W1
16 Jul 1973
TL;DR: In this paper, a half-cycle frequency-locked oscillator (FLOW) was proposed, where the discrepancy between the frequency of the input signal and the oscillator signal is observed on a half cycle basis rather than on a full cycle basis.
Abstract: A frequency locked oscillator is capable of operating over several octaves without locking on harmonics. The discrepancy between the frequency of the input signal and the frequency of the oscillator signal is observed on a half cycle basis rather than on a full cycle basis as is done in conventional phase locked oscillator systems.

Patent
E Hugenholtz1
30 Jul 1973
TL;DR: In this article, a frequency synthesizer has a voltage-controlled oscillator whose output frequency is locked with the aid of a first control loop in relationship to a harmonic of the output signal from a first reference pulse generator.
Abstract: A frequency synthesizer has a voltage-controlled oscillator whose output frequency is locked with the aid of a first control loop in relationship to a harmonic of the output signal from a first reference pulse generator. A second reference pulse generator is part of a second control loop which stabilizes the frequencies of the output signals from said first and second reference pulse generators with respect to each other on an adjustable constant difference frequency. A third control loop disturbs the locking of the oscillator when it is locked to a frequency which is not a harmonic of the output signal from said second reference pulse generator.



Journal ArticleDOI
TL;DR: In this paper, a systematic approach to the design of harmonic oscillators on the basis of prescribed operating point, power and frequency is presented, and the concept of the transistor complex voltage gain/power (AR) space is introduced.
Abstract: Previous work by the authors on large-signal transistor characterization and oscillator design is briefly reviewed before introducing the concept of the transistor complex voltage gain/power (AR. AI, Pn) space. This is shown to give insight into a systematic approach to the design of harmonic oscillators on the basis of prescribed operating point, power and frequency.

Journal ArticleDOI
01 Dec 1973
TL;DR: Injection-locking experiments have been conducted with the punched-through-diode oscillator, and the results confirmed the nature of oscillations to be of a negative-resistance type and not of a relaxation type.
Abstract: Injection-locking experiments have been conducted with the punched-through-diode oscillator, and the results have agreed well with theory. This confirms the nature of oscillations to be of a negative-resistance type and not of a relaxation type.

Journal ArticleDOI
TL;DR: The Heisenberg picture solution of the forced harmonic oscillator is specialized to the case when the force is an impulse, and the result is used to illustrate very simply the zero-phonon feature of the Mossbauer effect.
Abstract: The Heisenberg picture solution of the forced harmonic oscillator is specialized to the case when the force is an impulse, and the result is used to illustrate very simply the zero-phonon feature of the Mossbauer effect.

Journal ArticleDOI
TL;DR: In this article, a simple injection-locking experiment for oscillator characterization is demonstrated, and the experiments confirm theoretical treatments of injection locking, as well as the results of the experiments themselves.
Abstract: A simple injection-locking experiment for oscillator characterization is demonstrated. The measurements confirm theoretical treatments of injection locking.

Journal ArticleDOI
S.F. Paik1
01 Apr 1973
TL;DR: In this article, an injection-locked oscillator is used as an FM amplifier, its locking bandwidth should always exceed the drift range of the free-running frequency, and the gain limitation imposed by this requirement may be calculated in terms of temperature variations of the diode and circuit properties.
Abstract: When an injection-locked oscillator is used as an FM amplifier, its locking bandwidth should always exceed the drift range of the free-running frequency. The gain limitation imposed by this requirement may be calculated in terms of temperature variations of the diode and circuit properties.

Journal ArticleDOI
TL;DR: In this article, the experimental 6 GHz Gunn oscillator consists of a TE101 waveguide cavity and a coupling slot, both being mechanically tunable in frequency, and the fractional-bandwidth?voltage gain products of approximately 0.2, corresponding to Qext = 10, were obtained.
Abstract: The experimental 6 GHz Gunn oscillator consists of a TE101 waveguide cavity and a coupling slot, both being mechanically tunable in frequency. Fractional-bandwidth?voltage-gain products of approximately 0.2, corresponding to Qext = 10, were obtained. Comparison is made with other broadband injection-locked solid-state oscillators.


Dissertation
01 Jan 1973
TL;DR: In this paper, a theory for the frequency variation with temperature in X-band Gunn diodes has been examined theoretically and experimentally, which enables the df/dT to be calculated in terms of the injection locking Q and the loading on the diode from any model of diode operation.
Abstract: The reasons for frequency variation with temperature in X-band Gunn diodes have been examined theoretically and experimentally. Frequency changes arise from the sensitivity of the diode admittance to r. f. voltage, to changes in the velocity field characteristic, the dielectric constant and the expansion coefficient of GaAs and to changes in the nature of the contacts to the diode. The diode cannot be considered in isolation from the circuit because of the heavy coupling between the two. A theory is presented which enables the df/dT to be calculated in terms of the injection locking Q and the loading on the diode from any model of diode operation. The way in which the typical X-band diode operates is largely unknown. The various possibilities are discussed and the values of the parameter Q/f df/dT Gd/God approprite to each mode are calculated. It is shown that a model of the hybrid mode, where the degree of domain build-up varies from slice to slice, can explain the experimentally observed df/dT and in particular the zero values which have been found. Investigations on the temperature variation of the sub-threshold properties of AgSn contacted and n+ GaAs contacted diodes have revealed departures from the ideal which are attributed to the contact regions, but no identifiable effect from this source has been found on the room temperature measurements of From the circuit work a model for some S4 outline packages in reduced height waveguide 16 has been obtained and the existence of a second cavity resonance at low frequencies, between the diode capacitance and the evanescent inductance of the circuit, has been demonstrated. Information oh the harmonic impedances over which the Gunn diode can work has been obtained from measurements on a scaled model of circuit and package and the temperature variation of the dielectric constant of GaAs has been measured.