Injection locking

About: Injection locking is a research topic. Over the lifetime, 4567 publications have been published within this topic receiving 60942 citations.

A 6.75–8.25-GHz −250-dB FoM Rapid ON/OFF Fractional-N Injection-Locked Clock Multiplier

Abstract: A rapid ON/OFF LC-based fractional-N injection-locked clock multiplier (ILCM) is presented. The proposed architecture extends the merits of ILCMs to fractional-N operation. It employs a high-resolution digital-to-time converter to align the injected pulses to the oscillator’s zero crossings. An all-digital frequency-tracking loop continuously tunes the oscillator free-running frequency toward the target output frequency. The proposed clock multiplier can be powered ON from a completely OFF state almost instantaneously. Background calibration techniques ensure that robust operation across process, voltage, and temperature. Fabricated in 65-nm CMOS process with an active area of 0.27 mm2, the prototype ILCM generates output clock in the range of 6.75–8.25 GHz using a 115-MHz reference clock. It achieves integrated jitter performance of 109 fsrms (integer-N) and 177 fsrms (fractional-N), while consuming only 2.65 (integer-N) and 3.25 mW (fractional-N). This translates to the best-reported FoMJ of −255 (integer-N) and −250 dB (fractional-N). The turn-on time is less than 4 ns in both the integer- and fractional-N modes, illustrating almost instantaneous settling.

2.4-10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor

Abstract: A wide-frequency-range low-phase-noise voltage controlled oscillator (VCO) with subharmonic injection locking is proposed and an implementation in 90 nm complementary metal oxide semiconductor (CMOS) is demonstrated. The result is a combination of the scalability and wide frequency tuning range naturally expected of a ring VCO and phase-noise performance close to that of an LC VCO using injection locking. The fabricated circuit is only 0.00054 mm2 in area, and its frequency tuning range is from 2.4 to 10 GHz. For a 500 MHz input reference signal and a 9.0 GHz (=18×500 MHz) output frequency, the 1-MHz-offset phase noise was -125 dBc/Hz. This is a 54 dB improvement over the free-running VCO phase noise of -71 dBc/Hz. The power consumption at 9.0 GHz is 9.5 mW.

Oscillator circuit for locking two or more LC-oscillators by mutual inductance coupling

Abstract: A method of locking a first LC-oscillator with a second LC-oscillator and a circuit and an arrangement therefore. The method comprises coupling by mutual inductance a resonance inductor of the first LC-oscillator with a resonance inductor of the second LC-oscillator. A development of an oscillator circuit according to the invention comprising two locked differential LC-oscillators is an oscillator arrangement locking together two oscillator circuits by AC coupling fundamental frequency AC-ground points of the two oscillator circuits.

W-Band Optoelectronic Oscillator

Abstract: We demonstrate the first W-band optoelectronic oscillator (OEO), that oscillates at 94.5 GHz with a measured single side band (SSB) phase noise of −101 dBc/Hz at an offset frequency of 10 kHz from the carrier. Side mode suppression of more than 65 dB has been achieved by using injection locking. This OEO has potential application as a signal source in emerging W-band applications (e.g. fiber-wireless links) and opens a path to low phase noise sources beyond 100 GHz.

Single frequency operation of a tunable injection-seeded Nd:GSAG Q-switched laser around 942nm

Abstract: Single frequency operation of a diode-pumped tunable injection-seeded Nd:GSAG Q-switched laser around 942nm was demonstrated. With a three-mirror ring cavity, the single frequency laser pulse with output energy of 13.2mJ was obtained at a repetition rate of 10Hz. The linewidth of the single frequency laser was less than 100MHz. The wavelength of the single frequency Nd:GSAG laser can be tuned from 942.38nm to 943.10nm.