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Injection locking

About: Injection locking is a research topic. Over the lifetime, 4567 publications have been published within this topic receiving 60942 citations.


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Proceedings ArticleDOI
C.J. Madden1, D.R. Snook, R.L. Van Tuyl, M.V. Le, L.D. Nguyen 
03 Nov 1996
TL;DR: In this paper, a dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator using a simple pumped-delay model of a two-stage ring oscillator.
Abstract: A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.

17 citations

Journal ArticleDOI
TL;DR: A monolithic optical injection-locked (MOIL) DFB laser with large stable injection locking range is experimentally demonstrated using the side-mode injection locking technique and the low-frequency roll-off in the MOIL D FB laser is suppressed significantly.
Abstract: A monolithic optical injection-locked (MOIL) DFB laser with large stable injection locking range is experimentally demonstrated using the side-mode injection locking technique. The low-frequency roll-off in the MOIL DFB laser is suppressed significantly. The relaxation oscillation frequency is measured to be 26.84 GHz and the intrinsic 3-dB response bandwidth is more than 30 GHz, which is about 20 GHz higher than that of the free running DFB laser. The nonlinear distortions, including the 1-dB compression point, second harmonic distortion (2HD) and third-order intermodulation distortion (IMD3), are also suppressed significantly. A simple radio-over-fiber system transmitting 40 Msymbol/s 32-QAM signal with 6 GHz carrier is achieved using the MOIL DFB laser. After 50 km transmission, the average error vector magnitude (EVM) of the whole link is 2.94% in injection locked state, while the EVM in free running DFB laser is 5.25% as a comparison. To our knowledge, this is the first time that the MOIL DFB laser is realized utilizing the side-mode injection locking method.

17 citations

Journal ArticleDOI
TL;DR: A compact and robust method for generating a 399-nm light resonant on the 1S0 - 1P1 transition in ytterbium using a single-pass periodically poled LiNbO3 waveguide for second harmonic generation (SHG).
Abstract: We demonstrate a compact and robust method for generating a 399-nm light resonant on the 1S0 − 1P1 transition in ytterbium using a single-pass periodically poled LiNbO3 waveguide for second harmonic generation (SHG). The obtained output power at 399 nm was 25 mW when a 798-nm fundamental power of 380 mW was coupled to the waveguide. We observed no degradation of the SHG power for 13 hours with a low power of 6 mW. The obtained SHG light has been used as a seed light for injection locking, which provides sufficient power for laser cooling ytterbium.

17 citations

Journal ArticleDOI
TL;DR: In this paper, the first experimental measurements of the FFO linewidth as a function of applied dc bias current and magnetic field have been performed both for two autonomous FFOs and with one of them injection-locked to a narrow-band external microwave source.
Abstract: Flux flow oscillators (FFO) have been experimentally investigated at frequencies up to 850 GHz. At 440 GHz the received power in an on-chip integrated SIS mixer is 5 /spl mu/W. The first experimental measurements of the FFO linewidth as a function of applied dc bias current and magnetic field have been performed both for two autonomous FFOs and with one of the FFOs injection-locked to a narrow-band external microwave source. By beating the two autonomous FFOs an integral spectral linewidth as low as 750 kHz is measured at 280 GHz. Mechanisms leading to a broadening of the FFO linewidth are discussed. Experimentally it is shown that the FFO can be used as harmonic generator. >

17 citations

Journal ArticleDOI
TL;DR: A 800 Mb/s to 3.2 Gb/s memory interface is designed that achieves 30% improved energy efficiency by eliminating idle mode power completely and corrects ±10% DCD without an additional duty cycle correction loop.
Abstract: A 800 Mb/s to 32 Gb/s memory interface is designed that achieves 30% improved energy efficiency by eliminating idle mode power completely The link is similar to a standard DDR architecture with the addition of a fast-lock DLL on the memory side that wakes up from 0 mW and locks within 3 clock cycles consuming 24 mW with residual timing error less than 33 mUI Following initial lock, the DLL operates in a closed loop to compensate for V,T drift consuming 6 mW @ 16 GHz including a replica buffer By incorporating an injection locked oscillator inside the loop, the DLL provides PLL like high frequency input jitter filtering, and corrects ±10% DCD without an additional duty cycle correction loop

17 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202333
202276
2021107
2020145
2019169
2018146