Topic
Injection locking
About: Injection locking is a research topic. Over the lifetime, 4567 publications have been published within this topic receiving 60942 citations.
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TL;DR: In this paper, the authors proposed to generate excitatory and inhibitory neuron-like dynamics in vertical-cavity surface-emitting lasers (VCSELs) by applying simultaneously the orthogonallypolarized CW optical injection (OPCWOI) and parallelly polarized pulse optical injection stimulus.
Abstract: We propose to generate excitatory and inhibitory neuron-like dynamics in vertical-cavity surface-emitting lasers (VCSELs) by applying simultaneously the orthogonally-polarized CW optical injection (OPCWOI) and parallelly-polarized pulse optical injection stimulus. Based on the spin flip model, excitatory and inhibitory neuron-like dynamics accompanying with reverse polarization switching is numerically investigated. It is found that, due to the injection locking effect or beating effect between two injected fields, the excitatory phasic and tonic spiking dynamics can be obtained in the originally dominated polarization mode. Moreover, the unwanted relaxation oscillation followed by the excitatory spiking dynamics at the end of the stimulus pulse, which is present in previous reported photonic neuron based on the VCSELs subject to a single orthogonally-polarized optical pulse injection, can be completely suppressed. In addition, the inhibition of tonic spiking dynamics can also be achieved, and the transition from tonic spiking dynamics to phasic bursting dynamics can be obtained, when the two injected fields have the same frequency. These results are interesting and valuable for the ultrafast photonic neuromorphic systems and neuron-inspired photonic information processing.
45 citations
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01 Jan 2002
TL;DR: In this article, a 5GHz quadrature LC voltage controlled oscillator based on super-harmonic injection locking to an on-chip free-running 10GHz master oscillator is presented.
Abstract: We present a 5GHz quadrature LC voltage controlled oscillator based on super-harmonic injection locking to an on-chip free-running 10GHz master oscillator. The oscillators are fabricated in a 0.18µm, low voltage digital CMOS process with a lossy substrate (ρ ∼20mohm-cm) and thin (1.6/µm), high resistivity M6. All the oscillators use fully integrated, low Q (∼4) spiral inductors. The 10GHz master oscillator achieves a tuning range of 1.4GHz, and a phase noise of -118dBc/Hz at a 1MHz offset. We measured the phase noise of the quadrature VCO to be 6dBc/Hz lower than that of the free-running master oscillator. The oscillator core draws 14mA from a 1.6V supply. An image reject receiver built using the quadrature signals provides nearly 40dB of image rejection, confirming better than 1° of quadrature matching. An on-chip frequency locked loop is shown to guarantee capture and accurate quadrature generation in the presence of an additional artificially introduced, 10% mismatch in the natural frequencies.
45 citations
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TL;DR: A scalable and cascadable “active frequency multiplier” chain architecture is proposed, which achieves THz signal generation from a low mm-wave frequency tone and proposes a multi-ring topology to facilitate the design and the high-frequency routing.
Abstract: This paper presents a multi-phase sub-harmonic injection locking technique. This technique can significantly increase the locking range of a multi-phase injection locking oscillator compared to the conventional single-phase injection locking scheme. By application of this technique, a scalable “active frequency multiplier” chain architecture is proposed, which can generate THz signal from a low mm-wave frequency or RF reference source. We also propose a multi-ring system topology to implement this frequency multiplier scheme. As proof of concept, a cascaded 3-stage 3-phase 2nd-order sub-harmonic injection locking oscillator chain is implemented in the IBM9HP SiGe BiCMOS process with its $f_{\rm T}/f_{\max}$ of 300/350 GHz. The design achieves a maximum output power of $-$ 16.6 dBm at 498 GHz, a phase noise of $-$ 87 dBc/ Hz at 1 MHz offset, and a total 5.1% frequency tuning range from 485.1 GHz to 510.7 GHz, which is the largest frequency tuning range among all the reported silicon-based THz oscillator sources in the 0.5 THz band.
45 citations
01 Jan 2015
44 citations
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TL;DR: A new approach to dual comb generation based on well-known optical techniques (Gain-Switching and Optical Injection Locking) is presented, providing a frequency-agile and adaptive dual-comb architecture with potential implementation capabilities from mid-infrared to near ultraviolet.
Abstract: In this paper, a new approach to dual comb generation based on well-known optical techniques (Gain-Switching and Optical Injection Locking) is presented. The architecture can be implemented using virtually every kind of continuous-wave semiconductor laser source (DFB, VCSEL, QCL) and without the necessity of electro-optic modulators. This way, a frequency-agile and adaptive dual-comb architecture is provided with potential implementation capabilities from mid-infrared to near ultraviolet. With a RF comb comprising around 70 teeth, the system is validated in the 1.5 μm region measuring the absorption feature of H13CN at 1538.523 nm with a minimum integration time of 10 μs.
44 citations