Insertion loss

About: Insertion loss is a research topic. Over the lifetime, 23045 publications have been published within this topic receiving 272553 citations.

Ultra-compact high order ring resonator filters using submicron silicon photonic wires for on-chip optical interconnects

Abstract: Ultra-compact 5(th) order ring resonator optical filters based on submicron silicon photonic wires are demonstrated. Out-of-band rejection ratio of 40dB, 1dB flat-top pass band of 310GHz with ripples smaller than 0.4dB, and insertion loss of only (1.8+/-0.5)dB at the center of the pass band are realized simultaneously, all within a footprint of 0.0007mm(2) on a silicon chip.

Si IC-compatible inductors and LC passive filters

Abstract: Passive inductors and LC filters fabricated in standard Si IC technology are demonstrated. Q-factors from three to eight and inductors up to 10 nH in the gigahertz range have been realized. Measurements on a five-pole maximally flat low-pass filter give midband insertion loss and -3 dB bandwidth close to the nominal design values of 2.25 dB and 880 MHz. >

High-Performance Hybrid Silicon and Lithium Niobate Mach-Zehnder Modulators for 100 Gbit/s and Beyond

Abstract: Optical modulators are at the heart of optical communication links Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost Unfortunately, these criteria have only been achieved on separate occasionsBased on a Silicon and Lithium Niobate hybrid integration platform, we demonstrate Mach-Zehnder modulators that simultaneously fulfill these criteria The presented device exhibits an insertion loss of 25 dB, voltage-length product of 22 Vcm, high linearity, electro-optic bandwidth of at least 70 GHz and modulation rates up to 112 Gbit/s The high-performance modulator is realized by seamless integration of high-contrast waveguide based on Lithium Niobate - the most mature modulator material - with compact, low-loss silicon circuits The hybrid platform demonstrated here allows for the combination of 'best-in-breed' active and passive components, opening up new avenues for enabling future high-speed, energy efficient and cost-effective optical communication networks

Micromachined low-loss microwave switches

Abstract: The design and fabrication of a micromechanical capacitive membrane microwave switching device is described. The switching element consists of a thin metallic membrane, which has two states, actuated or unactuated, depending on the applied bias. A microwave signal is switched on and off when the membrane is switched between the two states. These switches have a switching on speed of less than 6 /spl mu/s and a switching off speed of less than 4 /spl mu/s. The switching voltage is about 50 V. The switches have a bowtie shape and showed low insertion loss of 0.14 dB at 20 GHz and 0.25 dB at 35 GHz, and isolation of 24 dB at 20 GHz and 35 dB at 35 GHz. These devices offer the potential for building a new generation of low-loss high-linearity microwave circuits for a variety of phased antenna arrays for radar and communications applications.

50-Gb/s Silicon Optical Modulator

Abstract: Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.