Insulated-gate bipolar transistor
About: Insulated-gate bipolar transistor is a(n) research topic. Over the lifetime, 11718 publication(s) have been published within this topic receiving 114018 citation(s). The topic is also known as: IGBT.
••29 Jun 1992
Abstract: A class of zero voltage transition (ZVT) power converters is proposed in which both the transistor and the rectifier operate with zero voltage switching and are subjected to minimum voltage and current stresses. The boost ZVT-PWM converter is used as an example to illustrate the operation of these converters. A 300 kHz, 600 W ZVT-PWM boost, DC-DC converter, and a 100 kHz, 600 W power factor correction circuit using the ZVT-PWM technique and an insulated gate bipolar transistor (IGBT) device were breadboarded to show the operation of the proposed converters. It is shown that the circuit technology greatly improves the converter performance in terms of efficiency, switching noise, and circuit reliability. >
••15 Jun 2008
Abstract: In this paper a novel concept of high voltage direct current converter (HVDC) is presented employing the modular multilevel converter (M2C). Converters using IGBT-power devices, are getting increased importance in order to meet the global needs for reliable and environment friendly power supply and distribution. The new topology is compared to HVDC-transmission based on two level (2level) converters with direct series connected IGBT- devices or known multilevel converters. Main design aspects, concerning the rating of the power devices, the power losses and achievable efficiencies are investigated. For this purpose, a new computation method is presented and applied. This enables clear insight into the influence of various design parameters in a generalized form. Additionally, the characteristics and the differences of the topologies, with respect to passive filters, the necessary pulse frequencies and the arm currents are examined. As an example of the results, a comparison of the semiconductor losses and the efficiencies of the different topologies are given.
••03 Oct 1999
Abstract: Use of multilevel inverters is becoming popular in recent years for high power applications. Various topologies and modulation strategies have been investigated for utility and drive applications in literature. Trends in power semiconductor technology indicate a trade-off in the selection of power devices in terms of switching frequency and voltage sustaining capability. New power converter topologies permit modular realization of multilevel inverters using a hybrid approach involving integrated gate commutated thyristors (IGCT) and insulated gate bipolar transistors (IGBT) operating in synergism. This paper is devoted to the investigation of a hybrid multilevel power conversion system typically suitable for high performance, high power applications. This system designed for 4.16 kV, /spl ges/100 hp load comprises of a hybrid seven-level inverter, a diode bridge rectifier and an IGBT rectifier per phase. The IGBT rectifier is used on the utility side as a real power flow regulator to the low voltage converter and as a harmonic compensator for the high voltage converter. The hybrid seven-level inverter on the load side consists of a high voltage, slow switching IGCT inverter and a low voltage, fast switching IGBT inverter. By employing different devices under different operating conditions, it is shown that one can optimize the power conversion capability of entire system. A detailed analysis of a novel hybrid modulation technique for the inverter, which incorporates stepped synthesis in conjunction with variable pulse width of the consecutive steps is included. In addition, performance of a multilevel current regulated delta modulator as applied to the single phase full bridge IGBT rectifier is discussed. Detailed computer simulations accompanied with experimental verification are presented in the paper.
Abstract: The demand for lightweight converters with high control performance and low acoustic noise led to an increase in switching frequencies of hard switched two-level low-voltage 3-phase converters over the last years. For high switching frequencies, converter efficiency suffers and can be kept high only by employing cost intensive switch technology such as SiC diodes or CoolMOS switches; therefore, conventional IGBT technology still prevails. In this paper, the alternative of using three-level converters for low-voltage applications is addressed. The performance and the competitiveness of the three-level T-type converter (3LT2C) is analyzed in detail and underlined with a hardware prototype. The 3LT2 C basically combines the positive aspects of the two-level converter such as low conduction losses, small part count and a simple operation principle with the advantages of the three-level converter such as low switching losses and superior output voltage quality. It is, therefore, considered to be a real alternative to two-level converters for certain low-voltage applications.
01 Nov 1952
W. Shockley1•Institutions (1)
Abstract: The theory for a new form of transistor is presented. This transistor is of the "field-effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field. Since the amplifying action involves currents carried pre-dominantly by one kind of carrier, the name "unipolar" is proposed to distinguish these transistors from point-contact and junction types, which are "bipolar" in this sense. Regarded as an analog for a vacuum-tube triode, the unipolar field-effect transistor may have a m? of 10 or more, high output resistance, and a frequency response higher than bipolar transistors of comparable dimensions.