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Insulated-gate bipolar transistor

About: Insulated-gate bipolar transistor is a research topic. Over the lifetime, 11718 publications have been published within this topic receiving 114018 citations. The topic is also known as: IGBT.


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Journal ArticleDOI
TL;DR: In this paper, a bidirectional isolated dc-dc converter considered as a core circuit of 3.3kV/6.6kV high-power-density power conversion systems in the next generation is described.
Abstract: This paper describes a bidirectional isolated dc-dc converter considered as a core circuit of 3.3-kV/6.6-kV high-power-density power conversion systems in the next generation. The dc-dc converter is intended to use power switching devices based on silicon carbide (SiC) and/or gallium nitride, which will be available on the market in the near future. A 350-V, 10-kW and 20 kHz dc-dc converter is designed, constructed and tested. It consists of two single-phase full-bridge converters with the latest trench-gate insulated gate bipolar transistors and a 20-kHz transformer with a nano-crystalline soft-magnetic material core and litz wires. The transformer plays an essential role in achieving galvanic isolation between the two full-bridge converters. The overall efficiency from the dc-input to dc-output terminals is accurately measured to be as high as 97%, excluding gate drive and control circuit losses from the whole loss. Moreover, loss analysis is carried out to estimate effectiveness in using SiC-based power switching devices. Loss analysis clarifies that the use of SiC-based power devices may bring a significant reduction in conducting and switching losses to the dc-dc converter. As a result, the overall efficiency may reach 99% or higher

645 citations

Journal ArticleDOI
TL;DR: If simplified by the proposed method, all the remaining procedures necessary for the three-level SVPWM are done like conventional two-level inverter and the execution time is greatly reduced and the DC-link neutral-point potential control algorithms are implemented more easily.
Abstract: In this paper, a new simplified space-vector pulse width modulation (SVPWM) method for a three-level inverter is proposed. This method is based on the simplification of the space-vector diagram of a three-level inverter into that of a two-level inverter. If simplified by the proposed method, all the remaining procedures necessary for the three-level SVPWM are done like conventional two-level inverter and the execution time is greatly reduced. The DC-link neutral-point potential control algorithms are implemented more easily. The proposed method can be applied to the multi-level inverters above three-level. The validity of the new SVPWM method is verified by experiment with a 1000 kVA three-level insulated gate bipolar transistor (IGBT) inverter.

525 citations

Journal ArticleDOI
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Abstract: This paper reviews recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems. In the case of low voltage ( 100 V) power rectifiers, the silicon P-i-N rectifier continues to dominate but significant improvements are expected by the introduction of the silicon MPS rectifier followed by the GaAs and SiC based Schottky rectifiers. Equally important developments are occurring in power switch technology. The silicon bipolar power transistor has been displaced by silicon power MOSFETs in low voltage ( 100 V) systems. The process technology for these MOS-gated devices has shifted from V-MOS in the early 1970s to DMOS in the 1980s, with more recent introduction of the UMOS technology in the 1990s. For the very high power systems, the thyristor and GTO continue to dominate, but significant effort is underway to develop MOS-gated thyristors (MCTs, ESTs, DG-BRTs) to replace them before the turn of the century. Beyond that time frame, it is projected that silicon carbide based switches will begin to displace these silicon devices.

507 citations

Proceedings ArticleDOI
26 May 1997
TL;DR: In this paper, a fast power cycling test method activating the main failure mechanism has been developed which allows reproduction of millions of temperature changes in a short time, and the applicability of fast testing is supported by a mechanical analysis.
Abstract: The numerous advantages of insulated gate bipolar transistor (IGBT) power modules and their ongoing development for higher voltage and current ratings make them interesting for traction applications. These applications imply high reliability requirements. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead to a mechanical stress that can result in a failure. Lifting of bond wires is thereby the predominant failure mechanism. A fast power cycling test method activating the main failure mechanism has been developed which allows reproduction of millions of temperature changes in a short time. The applicability of fast testing is supported by a mechanical analysis. Test results show the number of cycles to failure as a function of temperature changes for an IGBT single switch. A descriptive model is deduced from the results.

507 citations

Journal ArticleDOI
TL;DR: An overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability is presented in this article, where fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
Abstract: Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.

466 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023306
2022530
2021236
2020442
2019602
2018619