Insulated-gate bipolar transistor

About: Insulated-gate bipolar transistor is a research topic. Over the lifetime, 11718 publications have been published within this topic receiving 114018 citations. The topic is also known as: IGBT.

Utilization of an active-clamp circuit to achieve soft switching in flyback converters

Abstract: Flyback derived power convertor topologies are attractive because of their relative simplicity when compared with other topologies used in low power applications. Incorporation of active-clamp circuitry into the flyback topology serves to recycle transformer leakage energy while minimizing switch voltage stress. The addition of the active-clamp circuit also provides a mechanism for achieving zero-voltage-switching (ZVS) of both the primary and auxiliary switches. ZVS also limits the turn-off di/dt of the output rectifier, reducing rectifier switching losses, and switching noise due to diode reverse recovery. This paper analyzes the behavior of the ZVS active-clamp flyback operating with unidirectional magnetizing current and presents design equations based on this analysis. Experimental results are then given for a 500 W prototype circuit illustrating the soft-switching characteristics and improved efficiency of the power converter. Results from the application of the active-clamp circuit as a low-loss turn-off snubber for IGBT switches is also presented.

Novel zero-current-transition PWM converters

Abstract: A new family of zero-current-transition (ZCT) pulse-width-modulated (PWM) converters are proposed. The new family of converters implements zero-current turn-off for power transistor(s) without increasing voltage/current stresses and operates at a fixed frequency. The proposed converters are deemed most suitable for high-power applications where the minority-carrier semiconductor devices (such as IGBTs, BJTs, and MCTs) are predominantly used as the power switches. Theoretical analysis is verified on a 100-kHz, 1-kW ZCT-PWM boost converter using an IGBT. >

An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations

Abstract: Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds ( di/dt, dv/ dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70% reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.

An active circuit for cancellation of common-mode voltage generated by a PWM inverter

Abstract: This paper proposes an active common-noise canceler (ACC) that is capable of eliminating the common-mode voltage produced by a pulsewidth modulation (PWM) inverter. An emitter follower using complementary transistors and a common-mode transformer are incorporated into the ACC, the design method of which is also presented in detail. Experiments using a prototype ACC, whose design and construction are discussed in this paper, verify its viability and effectiveness in eliminating common-mode voltage in a 3.7 kW induction motor drive using an insulated gate bipolar transistor (IGBT) inverter. Some experimental results show that the ACC makes significant contributions to reducing a ground current and a conducted electromagnetic interference (EMI). In addition, the ACC can prevent an electric shock on a nongrounded motor frame and can suppress motor shaft voltage.

Semiconductor losses in voltage source and current source IGBT converters based on analytical derivation

Abstract: A crucial criterion for the dimensioning of three phase PWM converters is the cooling of the power semiconductors and thus determination of power dissipation in the semiconductors at certain operating points and its maximum. Methods for the calculation and simulation of semiconductor losses in the most common voltage source and current source three phase PWM converters are well known. Here a complete analytical calculation of the power semiconductor losses for both converter types is presented, most parts are already known, some parts are developed here, as far as the authors know. Conduction losses as well as switching losses are included in the calculation using a simplified model, based on power semiconductor data sheet information. This approach should benefit the prediction and further investigations of the performance of power semiconductor losses for both kinds of converters. Results of the calculation are shown. Dependencies of the semiconductor power losses on the type of converter, the operating point and the pulse width modulation are pointed out, showing the general behaviour of power losses for both converter types.