Topic
Insulator (electricity)
About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.
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07 Aug 1998
TL;DR: In this paper, an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on a silicide layer are used for electron emission.
Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
164 citations
TL;DR: A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility and achieves low dispensing and actuation voltages for scaled devices with 30pl droplets.
Abstract: A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300pl droplets from 140nl closed on-chip reservoirs was accomplished with as little as 11.4V solely through EWD forces, and the actuation threshold voltage was 7.2V with a 1Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135nm sputtered tantalum pentoxide (Ta(2)O(5)) and 180nm parylene C coated with 70nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage, V(T), which is proportional to (t/e(r))(1/2), where t and e(r) are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200nm, 500nm, and 1µm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30pl droplets.
162 citations
01 May 1964
TL;DR: In this paper, the formation of dry bands and the subsequent growth of discharges on the polluted surface of a flat-strip insulator have been studied by scanning the voltage distribution along the strip at high speed.
Abstract: When a leakage current flows over the wet polluted surface of an insulator, high-resistance dry bands form. Discharges across these dry bands usually become extinguished but, exceptionally, may develop into a flashover of the insulator. The formation of dry bands and the subsequent growth of discharges on the polluted surface of a flat-strip insulator have been studied by scanning the voltage distribution along the strip at high speed. The behaviour of an arc rooted on a water surface has been investigated and the voltage gradients in the columns of arcs burning both in air and steam have been measured. Experiments show that when a water surface flashes over the arc burns in an atmosphere of steam, and that the condition for an arc to propagate over a resistive surface is that the voltage gradient on the surface exceeds that in the arc column. On this basis the flashover voltage of a water column is predictable to within 5%.
161 citations
IBM1
TL;DR: It is shown that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility and the field-induced band gap or band overlap in the different layers.
Abstract: We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.
161 citations
TL;DR: In this article, a review on recognized composite insulator faults and methods for their detection is provided, as well as diagnostic methods and tools for determining the quality of composite insulators.
Abstract: Composite insulators are considered mature products and a broad range of insulator types is nowadays available, including line insulators, hollow-core insulators and apparatus insulators, for applications ranging from distribution voltages to the highest transmission voltages. This development has created a need to elaborate diagnostic methods and tools for determining the quality of composite insulators. A review on recognized insulator faults and methods for their detection is provided.
160 citations