Topic
Insulator (electricity)
About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.
Papers published on a yearly basis
Papers
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07 Jun 1995TL;DR: In this article, the reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation, and the current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.
Abstract: The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation A constant voltage source is applied across the thin film insulator A low noise amplifier is connected across a resistor which is in series with the insulator A spectrum analyzer is connected to the low noise amplifier The power density is obtained by observing the output of a spectrum analyzer The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator
38 citations
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06 Nov 1997TL;DR: In this paper, a intermetal level dielectrics with fluorinated polymers of parylene (142) between metal lines (112-120), and vapor deposition method for the polymerization followed by fluorination of the polymers.
Abstract: A intermetal level dielectrics with fluorinated (co)polymers of parylene (142) between metal lines (112-120), and vapor deposition method for the (co)polymerization followed by fluorination of the (co)polymers.
38 citations
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29 Dec 1976
TL;DR: In this paper, a feed-thru type hermetic electrical connector including at least one connector pin feeding through an insulator block within the metallic body of the connector shell is described.
Abstract: A feed-thru type hermetic electrical connector including at least one connector pin feeding through an insulator block within the metallic body of the connector shell. A compression stop arrangement coaxially disposed about the insulator body is brazed to the shell, and the shoulder on the insulator block bears against this top in a compression mode, the high pressure or internal connector being at the opposite end of the shell. Seals between the pin and an internal bore at the high pressure end of the insulator block and between the insulator block and the metallic shell at the high pressure end are hermetically brazed in place, the first of these also functioning to transfer the axial compressive load without permitting appreciable shear action between the pin and insulator block.
38 citations
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TL;DR: In this article, a surface functionally graded material (SFGM) is proposed to reduce the electric field concentration induced flashover in AC gas insulated line (GIL), and the continuously graded high-A layer was fabricated by depositing BaTiO 3 on the insulator surface.
Abstract: To reduce the electric field concentration induced flashover in AC gas insulated line (GIL), a novel concept of surface functionally graded material (SFGM) is proposed in this paper, and the continuously graded high-A layer was fabricated by depositing BaTiO 3 on the insulator surface. The iterative method was introduced to optimize the thickness distribution of the BaTiO 3 layer. After four iterations, the layer thickness distribution almost reaches its optimal solution, and the maximum electric field strength is reduced by approximately 70% compared with that of the conventional insulator. To fabricate the optimized SFGM insulator, a rotatable baffle with the designed gap was placed above the insulator during the sputtering process. For comparison, a uniformly sputtered insulator with the 4μm BaTiO 3 layer and a discretely graded insulator with four gradients were prepared. Both electric field simulations and experiments were performed to evaluate the electrical performance of different insulators. The results show that, compared with the conventional insulator, the sputtered insulators, especially the optimized SFGM insulator, can significantly improve the uniformity of the electric field distribution along the insulator surface under a 50 Hz voltage. Accordingly, the discharge inception voltage and flashover voltage of the insulator both increased significantly. Under negative standard lightning impulse voltage (1.2/50 μs), the sputtered insulators show insulation performance comparable to that of the conventional insulator.
38 citations
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12 May 1994
TL;DR: In this paper, a cut-out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or with an insulating material having low complex permittivity such as silicon oxide buried therein.
Abstract: A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity such as silicon oxide buried therein. An insulator layer is formed on the cut out region and on the periphery thereof. A connection layer serves as one of the leads of the inductor and is formed using an electric conductive material such as a metal or doped polycrystalline silicon. A contact hole is provided in the interlayer insulation layer. A connection layer serves as an inductor and the other lead of the inductor, which is formed using an electric conductive material such as a metal. A protective insulator layer is also provided on the top of the structure.
38 citations