Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.

Thermally protected metal oxide varistor

Abstract: A varistor has a thermal fuse between a lead and an electrode. The fuse includes a link extending between the surface of an insulator and the fused electrode. The electrical connection of the link and the electrode is maintained by a low temperature solder fillet. That part of the link between the electrode and the insulator is surrounded by hot melt electrically insulating material. Upon sustained over-voltage conditions, the link and the solder fillet melt, and an insulating gap is rapidly created by molten hot melt material.

Dc Interfacial Breakdown on Contaminated Electrolytic Surfaces

Abstract: This paper covers the results of investigations of interfacial breakdown on electrolytic surfaces. A water-channel model is used to simulate an insulator surface with different conductivity levels. Effects of the chemical nature of the contaminants and contamination levels on the critical flashover voltage are studied. A multiple-arc model is introduced where the phenomenon of multiple discharges existing simultaneously on an electrolytic surface is investigated. The phenomenon of cathode fall voltage is further examined in order to arrive at a reasonable estimate for the model. A glow discharge model is adopted to provide the theoretical basis for the study.

Topological Anderson insulator in electric circuits

Abstract: In this paper, we investigate the realization of topological Anderson insulators in electric circuits. A disordered Haldane model is constructed through electric circuit networks composed of capacitors and inductors, where the disorder is introduced through the random induction of the grounding inductors. Based on the noncommutative geometry method and transport calculations, we confirm that such kind of disorder can drive a phase transition from a normal insulator to a topological Anderson insulator. Besides, such a disorder also possesses unique characteristics which are absent for the usual Anderson disorder. Therefore distinct features are exhibited by the topological Anderson transition in electric circuits. Finally, the topological Anderson insulator in circuits holds additional advantages for microelectronic technology that can be easily detected by measuring the quantized transmission coefficients and the edge state wave functions.

Semiconducting polymer field effect transistor

Abstract: A field effect transistor is made of five parts. The first part is an insulator layer, the insulator layer being an electrical insulator such as silica, the insulator layer having a first side and a second side. The second part is a gate, the gate being an electrical conductor such as silver, the gate being positioned on the first side of the insulator layer. The third part is a semiconductor layer, the semiconductor layer including a polymer, at least ten weight percent of the monomer units of the polymer being a 9-substituted fluorene unit and/or a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being on the second side of the insulator layer. The fourth part is a source, the source being an electrical conductor such as silver, the source being in electrical contact with the first end of the semiconductor layer. The fifth part is a drain, the drain being an electrical conductor such as silver, the drain being in electrical contact with the second end of the semiconductor layer. A negative voltage bias applied to the gate causes the formation of a conduction channel in the semiconductor layer from the source to the drain. On the other hand, a positive bias applied to the gate causes the formation of an electron conducting channel in the semiconductor layer.

The electrical breakdown properties of GaAs layers grown by molecular beam epitaxy at low temperature

Abstract: The electrical properties of as-grown low temperature (LT) GaAs grown at 200-300 degrees C have been investigated in the temperature range of 100-400 K. It was found that the resistivity of the LT GaAs layer increased as the growth temperature was increased from 200 degrees C to 300 degrees C. Correspondingly, over the same growth temperature range, the breakdown field decreased from 320 kV cm-1 to 80 kV cm-1, yet was more than one order of magnitude higher than that of semi-insulating GaAs. The breakdown voltage VBD was found to increase as the measurement temperature was decreased, differing from the behaviour of conventional avalanche breakdown. The transport properties of LT GaAs were characterized by hopping conduction at low electric field and low temperature. The particular properties of the as-grown LT GaAs layers suggest a useful application as in insulator in GaAs field effect transistors (FETS). The predominant ohmic behaviour resulting from hopping conduction, produces a uniform field in the material, which prevents the breakdown at the gate edge of the FETS or at the surface. The high breakdown strength suggests enhanced performance in power devices.