Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.

High resistance surface coating of solid insulating components for HVDC metal enclosed equipment

Abstract: The field distribution of DC insulation systems is controlled by the conductivity κ of the insulation material. It can be improved by using a high resistance surface coating. Furthermore this coating can prevent charge accumulation on the surface of the insulation. This paper reports about the investigations regarding such a coating that is applied to HVDC stress. The influence of voltage, electrical stress and temperature on the resistance of the coating are investigated.

Electron current through metal-insulator-metal sandwiches

Abstract: A straightforward numerical calculation is carried out for the energy distribution of the electron current from a metal into an insulator using the Sommerfeld and Bethe model, of a rectangular barrier modified by the image force. From the graphical presentation approximate formulae are developed for the total current density as a function of the electric field and temperature in wider ranges than those possible in the more rigorous calculation of Murphy and Good. The applicability of the new calculation to the solid-state case is stressed. Comparison with Advani's results suggests the inclusion of the multiple-image-force for sandwich thickness below 150 A. The effective mass in the forbidden band of aluminum oxide is calculated to be 1·78 m 0 as a result of the comparison. Specific conclusions, useful in the study of other solid-state thin-film devices, are made from the total current calculation.

Field-effect semiconductor device

Abstract: A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on the main semiconductor region. Between these electrodes, with spacings therefrom, an insulator is provided with is made from a material capable of developing a stress to reduce carrier concentration in neighboring part of the two-dimensional electron gas layer, creating a discontinuity in this layer. A gate electrode overlies the insulator via a piezoelectric layer which is made from a material capable of developing, in response to a voltage applied to the gate electrode, a stress for canceling out the stress developed by the insulator. Thus the device is physically held off by the action of the insulator while no voltage is being impressed to the gate electrode and, upon voltage application thereto, piezoelectrically turns on by the action of the piezoelectric layer. The turn-on resistance of the device is relatively low as the insulator occupies only part of the source-drain spacing.

Light emitting device and method of manufacturing

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting device having a high resolution picture element part. SOLUTION: An anode 102 and a bank 104 orthogonal to the anode 102 are arranged on an insulator 101. A part (a control bank 104b) of the bank 104 is composed of a metallic film, and an electric field is formed by impressing voltage on this part, and an orbit of an EL material charged with electric charge can be controlled. A film forming position of an EL layer can be precisely controlled by using this control. COPYRIGHT: (C)2001,JPO