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Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.


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Journal ArticleDOI
TL;DR: In this paper, the effect of reduction of ultrathin TiO2 by Ti and its effect on Fermi level depinning and contact resistivity reduction to Si is experimentally studied.
Abstract: Experimental evidence of reduction of ultrathin TiO2 by Ti is presented and its effect on Fermi level depinning and contact resistivity reduction to Si is experimentally studied. A low effective barrier height of 0.15 V was measured with a Ti/10 A TiO2−x/n-Si MIS device, indicating 55% reduction compared to a metal/n-Si control contact. Ultra-low contact resistivity of 9.1 × 10−9 Ω-cm2 was obtained using Ti/10 A TiO2−x/n+ Si, which is a dramatic 13X reduction from conventional unannealed contacts on heavily doped Si. Transport through the MIS device incorporating the effect of barrier height reduction and insulator conductivity as a function of insulator thickness is comprehensively analyzed and correlated with change in contact resistivity. Low effective barrier height, high substrate doping, and high conductivity interfacial layer are identified as key requirements to obtain low contact resistivity using MIS contacts.

143 citations

Journal ArticleDOI
TL;DR: In this paper, the surface of insulators becomes electrically charged when subjected to high-voltage stresses and a model simulating the charging mechanism is described, showing that the surface charge densities are proportional to the applied voltage and depend on the secondary electron emission of the dielectric surface.
Abstract: In vacuum, the surface of insulators becomes electrically charged when subjected to high-voltage stresses. The charging mechanism is described. A model simulating the charging shows that the surface charge densities are proportional to the applied voltage and depend on the secondary electron emission of the dielectric surface. It is also time dependent. Surface charges are shown to explain many results obtained in studies of insulator surface breakdown.

142 citations

Journal ArticleDOI
Chuanyang Li1, Jun Hu1, Lin Chuanjie1, Boya Zhang1, Guixin Zhang1, Jinliang He1 
TL;DR: In this paper, the effect of direct fluorination on surface charge migration and flashover voltage was verified, and it was shown that the surface charge decay of epoxy-based model insulators is a slow process, but the decay rate increases when an outer dc electric field is applied.
Abstract: Epoxy-based model insulators were manufactured and fluorinated under a F2/N2 mixture (12.5% F2) at 50 °C and 0.1 MPa for 15 min and 60 min. Surface charge accumulation and decay behavior were studied with and without dc voltage application. The effect of direct fluorination on surface charge migration as well as on flashover voltage was verified. The obtained results show that the charge decay of epoxy-based insulators is a slow process, but the decay rate increases when an outer dc electric field is applied. The surface charge distribution is changed when a streamer is triggered on the insulator surface. The existence of heteropolarity surface charges can decrease the dc surface flashover voltage to some extent, while the surface flashover voltage is almost unchanged when charges of the same polarity accumulate on the insulator surface. The short time fluorinated insulator can modify the surface resistivity, and the rate of surface charge dissipation is greatly increased under a dc electric field.

141 citations

Journal ArticleDOI
TL;DR: In this article, the feasibility of inkjet-printed passive components such as resistor, capacitor, and inductor were demonstrated on a polyimide (PI) substrate with various functional inks.

141 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigate a technique that has the potential to enhance the breakdown voltage (V br ) of AlGaN/GaN high electron mobility transistors (HEMTs) beyond 1 kV.
Abstract: We investigate a technique that has the potential to enhance the breakdown voltage ( V br ) of AlGaN/GaN high electron mobility transistors (HEMTs) beyond 1 kV. The technique involves incorporation of a field plate (FP) connected to the gate and placed over a stepped insulator (SI). A comprehensive account of the critical geometrical and material variables controlling the field distribution under the FP is provided. A systematic procedure is given for designing a SIFP device, using 2-D simulation, to obtain the maximum V br with minimum degradation in on-resistance and frequency response. Simulations show that, for a 2-DEG concentration of 1×10 13 cm −2 , the maximum V br achievable with a stepped aluminum nitride (silicon nitride) insulator can be 2.6 (2.3) times higher than that with a uniform insulator; V br ∼1 kV can be obtained using a gate to drain separation as low as ∼7 μm. The methodology of this paper can be extended to the design of SIFP structures in other lateral FETs, such as MESFETs and LD-MOSFETs.

140 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023368
2022892
2021224
2020478
2019561
2018629