Topic
Insulator (electricity)
About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.
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Patent•
15 May 2003
TL;DR: In this article, an electrostatic precipitator, including a corona discharge electrode assembly in a housing, an insulator extending along an internal surface of a wall of the housing, and a power supply in the housing on the opposite side of the insulator from the housing wall such that the insulators is between the wall and the power supply.
Abstract: An electrostatic precipitator, including for a diesel engine electrostatic crankcase ventilation system for blowby gas, includes a corona discharge electrode assembly in a housing, an insulator extending along an internal surface of a wall of the housing, a power supply in the housing on the opposite side of the insulator from the housing wall such that the insulator is between the housing wall and the power supply, and a low voltage lead extending through the housing wall and through the insulator to the power supply, eliminating pass-through of a high voltage lead through the housing wall and through the insulator. The power supply is preferably provided in the hollow interior of the corona discharge electrode assembly.
30 citations
TL;DR: In this article, the authors presented the unique features exhibited by a novel nanoscale silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) in which the silicon active layer consists of an insulator region (IR-SOI).
Abstract: Device performance in the electronic circuits degrades with elapsed time. Therefore it is important to design a new device to have a reliable performance. In this paper, we present the unique features exhibited by a novel nanoscale silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) in which the silicon active layer consists of an insulator region (IR-SOI). The high- K dielectric HfO 2 as an insulator material is located in the silicon active layer and drain region. Our simulation results demonstrate that this leads to improve the hot electron reliability of the IR-SOI in comparison with the conventional SOI-MOSFET (C-SOI). The insulator region HfO 2 considerably decreases the electric field in the channel and drain regions. Therefore, the degradation mechanism in the proposed structure is lower than that in the C-SOI structure because of reduction of hot carrier effect (HCE). Also using two-dimensional and two-carrier device simulation, we have investigated the improvement in device performance focusing on the HCE, off current, gate current and gate induced drain leakage (GIDL) which can effect on the reliability of the CMOS devices.
30 citations
TL;DR: It was demonstrated that decreasing the number of columns in the post array allows for the dielectrophoretic trapping of nanometer-scale particles at voltages well below those reported in previous similar iDEP systems, illustrating how the iDEP channel configuration can be customized for specific applications.
Abstract: Insulator-based dielectrophoresis (iDEP) is a microfluidic technique used for particle analysis in a wide array of applications. Significant efforts are dedicated to improve iDEP systems by reducing voltage requirements. This study assesses how the performance of an iDEP system, in terms of particle trapping, depends on the number of insulating obstacles longitudinally present in the microchannel. In analogy with Kirchhoff’s loop rule, iDEP systems were analyzed as a series combination of electrical resistances, where the equivalent resistance of the post array is composed by a number of individual resistors (columns of insulating posts). It was predicted by the COMSOL model, and later confirmed by experimental results, that reducing the number of columns of insulating posts significantly affects the electric field distribution, decreasing the required voltage to dielectrophoretically trap particles within the post array. As an application, it was demonstrated that decreasing the number of columns in the ...
30 citations
TL;DR: In this paper, a method for the calculation of the electric field on high voltage insulators is presented, where a model of the insulator string was set up using OPERA, an electromagnetic analysis program based on the Finite Element Method.
Abstract: In this study, a method for the calculation of the electric field on high voltage insulators is presented. A model of the insulator string was set up using OPERA, an electromagnetic analysis program based on the Finite Element Method. In order to validate the accuracy of the method, simulated results have been compared with experimental results. Copyright © 2008 John Wiley & Sons, Ltd.
30 citations
Patent•
23 Apr 2004
TL;DR: In this article, an improved armature construction in which a coil winding wiring board and cooperating insulator around which the coils are wound at least in part are interconnected by an attachment arrangement that automatically positions and retained components in the desired circumferential, axial and radial positions.
Abstract: An improved armature construction in which a coil winding wiring board and cooperating insulator around which the coils are wound at least in part wherein the insulator and wiring board are interconnected by an attachment arrangement that automatically positions and retained components in the desired circumferential, axial and radial positions.
30 citations