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Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a 15 kV silicone rubber distribution insulator was made under contaminated surface conditions and the electric field on the insulator surface and in the surrounding area was determined by using the finite element method.
Abstract: Electrical and thermal analysis of a 15 kV silicone rubber distribution insulator was made under contaminated surface conditions. The electric field on the insulator surface and in the surrounding area was determined by using the finite element method technique, while the temperature distribution along the insulator surface was calculated by solving the heat transfer differential equation numerically. A special mathematical treatment was used to reduce the heat transfer equation into a 1-dimensional problem. The effects of initial surface contamination upon the features of electric field was studied. The dependence of the change in insulator surface temperature as a result of leakage current flowing over the contaminated surface on the physical parameters involved in the heat conduction process was studied and is presented in detail.

28 citations

Patent
25 Apr 2006
TL;DR: In this paper, the authors presented an electrical cable having two or more conductors (11, 12), one or more multistrip insulators (17), and a protective cover.
Abstract: The present invention provides an electrical cable having two or more conductors (11, 12), one or more multistrip insulators (17) separating the two or more conductors (11, 12) from one another, and a protective cover (16) formed around the two or more conductors (11, 12) and one or more multistrip insulators (17). The multistrip insulator (17) may include one or more dielectric strips (14), one or more protective strips (13, 15) or a combination thereof. The present invention also provides a method for manufacturing an electrical cable by providing two or more conductors (11, 12), separating the two or more conductors (11, 12) from one another using one or more multistrip insulators (17), and forming a protective cover (16) around the two or more conductors (11, 12) and one or more multistrip insulators (17).

28 citations

01 Mar 1990
TL;DR: In this article, it was shown that any junction of conductor and insulator exposed to space plasma conditions will arc into the plasma at a few hundred volts negative potential, relative to the local plasma.
Abstract: Solar cells in space plasma conditions are known to arc into the plasma when the interconnects are at a negative potential of a few hundred volts, relative to plasma potential For cells with silver-coated interconnects, a threshold voltage for arcing exists at about -230 V, as found in both ground and LEO experiments The arc rate beyond the threshold voltage depends nearly linearly on plasma density, but has a strong power-law dependence on voltage, such that for small increments in operating voltage there is a large increment in arc rate The arcs generate broadband radio interference and visible light In ground tests, interconnects have been damaged by arcs in cells having insufficient isolation from a source of high current Models for the arcs are highly dependent on the choice of interconnect conductor material exposed to the plasma and possibly on the geometry and choice of adjacent insulator material Finally, new technology solar cells use copper for the cell interconnects, a material which may have a lower arcing threshold voltage than silver It is expected, from ground tests of simulated solar cells, that any junction of conductor and insulator exposed to space plasma conditions will arc into the plasma at a few hundred volts negative potential, relative to the local plasma

28 citations

Patent
03 Oct 1969
TL;DR: In this article, the memory element is an insulated gate field effect transistor (IGFET) whose gate contains a metal electrode located on top of two parallel layered insulators, such as silicon oxide and zinc sulfide.
Abstract: An electronic memory apparatus is disclosed in which the memory element is an insulated gate field effect transistor (IGFET) whose gate contains a metal electrode located on top of two parallel layered insulators, such as silicon oxide and zinc sulfide. The memory of a signal voltage applied to the gate electrode is provided by the phenomenon of tunneling of electrical charges between the metal electrode and the interface between the two insulator layers. These charges are trapped at this interface until a voltage of opposite sign is applied which is sufficient to discharge (''''erase'''' ) the trapped charges at the interface. Nondestructive readout of the presence or absence of these trapped charges is afforded by monitoring the sourcedrain current in the transistor.

28 citations

Journal ArticleDOI
TL;DR: In this paper, a nanometer transistor, metal/insulator tunnel transistor (MITT), which consists of only metal and insulator is experimentally studied, and it is demonstrated that the MITT with 16 nm channel length fabricated by conventional photolithography can operate similarly to the conventional metal/oxide/semiconductor field effect transistor with on/off ratio of current larger than 105.
Abstract: A nanometer transistor, metal/insulator tunnel transistor (MITT), which consists of only metal and insulator is experimentally studied. In the MITT, the Fowler–Nordheim tunneling currents through an insulator in lateral metal/insulator/metal structure are controlled by changing a voltage at a gate electrode upon the middle insulator, due to variation of tunnel-barrier thickness at the insulator. It is demonstrated that the MITT with 16 nm channel length fabricated by conventional photolithography can operate similarly to the conventional metal/oxide/semiconductor field-effect transistor with on/off ratio of current larger than 105. The result indicates that the MITT is a promising candidate for future switching transistors in ultralarge scale integrated circuits.

28 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023368
2022892
2021224
2020478
2019561
2018629