Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.

Insulated gate semiconductor device

Abstract: In a semiconductor device having a trench type insulated gate structure, in the case where a drift layer (2) of an n- conduction type has a high carrier concentration, when a high voltage is applied between a drain and a source in such a manner that a channel is not formed, the electric field strength of an insulator layer (9) below the trench type insulated gate is increased, thus causing breakdown The withstand voltage of the semiconductor device is limited by the breakdown of the insulator layer (9), and it is difficult to realize high withstand voltage Thus, a field relaxation semiconductor region (1) of a conduction type opposite to the conduction type of the drift layer (2) is formed within the drift layer (2) below the insulator layer (9) in the trench of the trench type insulated gate semiconductor device Also, the thickness of a bottom portion of the insulator layer (9) provided in the trench of the trench type insulated gate semiconductor device is made significantly greater than the thickness of a lateral portion thereof

Electric Field Effect in Diluted Magnetic Insulator Anatase Co: TiO~2

Abstract: An external electric field induced reversible modulation of a room temperature magnetic moment and coercive field is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO 2 . This first demonstration of an electric field effect in any oxide-based diluted ferromagnet is realized in a high quality epitaxial heterostructure of PbZr 0.2 Ti 0.8 O 3 /Co: TiO 2 /SrRuO 3 grown on (001) LaAlO 3 . The observed effect, which is about 15% in strength in a given heterostructure, can be modulated over several cycles. Possible mechanisms for electric field induced modulation of insulating ferromagnetism are discussed.

Stationary resistive field distribution along epoxy resin insulators in air under DC voltage

Abstract: The stationary resistive field distribution on the gas-solid interface along epoxy resin insulators is theoretically and experimentally investigated. Due to the phenomenon that the charge carriers necessary for the conduction process originate from natural ionization and a constant generation rate is assumed, the resulting electric conductivity of gases under dc voltage stress is nonlinearly depending on the field strength. A simulation model which considers the relevant characteristic is used to calculate the electric field in gas-solid insulation systems. The influence of the ion pair generation rate of the gas, the electric field strength and the surface conductivity of an insulator on the resistive field distribution is investigated. The results are compared to simulations, in which the electric conductivity of the gas is assumed to be constant. The simulations are verified by measurements of the surface potential along an epoxy resin insulator under dc voltage.

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Abstract: Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO2, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.