Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.

Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal

Abstract: Water is composed of two strong electrochemically active agents, H+ and OH− ions, but has not been used as an active electronic material in oxide semiconductors In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO3, using water-infiltrated nanoporous glass—amorphous 12CaO·7Al2O3—as the gate insulator Positive gate voltage, electron accumulation, water electrolysis and electrochemical reduction occur successively on the SrTiO3 surface at room temperature This leads to the formation of a thin (~3 nm) metal layer with an extremely high electron concentration (1015–1016 cm−2), which exhibits exotic thermoelectric behaviour The electron activity of water as it infiltrates nanoporous glass may find many useful applications in electronics or in energy storage Water is composed of the electrochemically active species, H+ and OH−, but has not been used as an active electronic material In this study, a field-effect transistor is developed that uses water-infiltrated nanoporous glass as the gate insulator; this new application of water may be useful in electronics and energy storage

Differential signal transmission cable

Abstract: A differential signal transmission cable has a pair of conductors arranged to be distant from each other and parallel to each other, an insulator covering the pair of conductors, and a shield conductor wound around the insulator. The insulator has an outer periphery shape of a transversal cross section in that a plurality of curved lines with different curvature radiuses are combined. The shield conductor has an inner periphery shape of a transversal cross section in that the plurality of curved lines are combined in accordance with the outer periphery shape of the insulator.

A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate Insulator

Abstract: A nonvolatile MIS memory device using a ferroelectric polymer thin film in the gate insulator is proposed. In the gate electrode of the device, a ferroelectric polymer thin film is sandwiched between two insulator films to prevent carrier injection into the polymer thin film. Al-SiO2-P (VDF/TrFE)-SiO2-Si capacitors were fabricated to evaluate the basic characteristics of the device by C-V measurement, and ferroelectric polarization reversal was observed in the capacitors. Based on the C-V measurements, MIS transistors were fabricated using a process which virtually self-aligns the effective gate area to the source/drain. It was shown that the MIS transistor could be electrically programmed and erased. The on/off ratio of the transistor was greater than 106.

Vacuum thermal switch made of phase transition materials considering thin film and substrate effects

Abstract: In the present study, we theoretically demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341 K. Strong coupling of surface phonon polaritons between two insulating VO2 plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO2 emitter becomes metallic, resulting in strong thermal switching effect. Fluctuational electrodynamics incorporated with anisotropic wave propagation predicts more than 80% heat transfer reduction at sub-30-nm vacuum gaps and 50% at vacuum gap of 1 μm. Furthermore, the penetration depth inside the uniaxial VO2 insulator is studied at the vacuum gap of 50 nm, suggesting the possible impact of reduced VO2 thickness on the near-field thermal radiation with thin-film structures. By replacing the bulk VO2 receiver with a thin film of several tens of nanometers, the switching effect is further improved over a broad range of vacuum gaps from 10 nm to 1 μm. Finally, the effect of SiO2 substrate for the thin-film emitter or receiver is also considered to provide insights for future experimental demonstrations. By controlling heat flow with near-field radiative transport, the proposed vacuum thermal switch would find practical applications for energy dissipation in microelectronic devices and for the realization of thermal circuits.

Development of 500-kV XLPE cables and accessories for long distance underground transmission line-Part I: insulation design of cables

Abstract: This paper discusses the results of a basic study for the development of 500 kV XLPE power cables. The authors have established that the factors that decide the performance of today's XLPE cables are impurities in the insulator and protrusions on the semiconductive layer, and that the insulation performance of XLPE power cables is determined by the size of these defects. In model tests of XLPE power cables, the minimum insulation breakdown stress of cables was determined, to set the design values for 500 kV XLPE cable. As a result, it was found that it is possible to design cables having an insulation thickness of 25 mm. >