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Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.


Papers
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Journal ArticleDOI
TL;DR: In this article, an analytical model allowing one to determine the critical voltage that insulators can withstand is also established, based on an energetic balance, an equivalent electrical circuit and the physical characteristics of the arc.
Abstract: In this paper, the principal pollution flashover models are reviewed and then an impedance criterion for arc propagation is proposed. This criterion differentiates the case in which the arc elongates until total flashover occurs from the case in which the arc stops before it reaches the end of the insulator. It is shown that the Hampton criterion is not a sufficient condition for initiation of the arc. Indeed, the latter can expand, under certain conditions, even if the Hampton criterion is not satisfied. An analytical model allowing one to determine the critical voltage that insulators can withstand is also established. This is based on an energetic balance, an equivalent electrical circuit and the physical characteristics of the arc. The critical voltage, the critical current and the critical arc length for polluted insulators are calculated using the elaborated model. The results so obtained are found to be in accordance with the experimental ones represented by known empirical relations.

76 citations

Patent
16 Jan 2001
TL;DR: In this paper, a damascene-based process for forming a vertical, metal-insulator-metal (MIM) capacitor structure for embedded DRAM devices, using a Damascene procedure, has been developed.
Abstract: A process for forming a vertical, metal-insulator-metal (MIM), capacitor structure, for embedded DRAM devices, using a damascene procedure, has been developed. The process features forming a capacitor opening in a composite insulator layer comprised of a overlying insulator stop layer, a low k insulator layer, and an underlying insulator stop layer, with a lateral recess isotropically formed in the low k insulator layer. After formation of a bottom electrode structure in the capacitor opening, a high k insulator layer is deposited followed by the deposition of a conductive layer, completely filling the capacitor opening. A chemical mechanical polishing procedure is then used to remove portions of the conductive layer, and portions of the high k insulator layer, from the top surface of the overlying insulator stop layer, resulting in the formation of the vertical MIM capacitor structure, in the capacitor opening, comprised of: a top electrode structure, defined from the conductive layer; a capacitor dielectric layer, formed from the high k insulator layer; and a bottom electrode structure.

76 citations

Journal ArticleDOI
TL;DR: Experimental evidence of a nonvolatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4 Se8 is reported.
Abstract: Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.

76 citations

Journal ArticleDOI
TL;DR: The thermal step method (TSM) as discussed by the authors is a non-destructive technique which measures the distribution of the electric field and space charge density across solid insulating materials, which can be used to determine the charge distribution in an insulator while submitted to an external dc field.
Abstract: The thermal step method (TSM) is a nondestructive technique which measures the distribution of the electric field and space charge density across solid insulating materials. This work first reviews the principle and the basic equations of the TSM when used on a short circuited flat insulating structure (film or plate). An evolution of the method, which allows the determination of space charge distribution in an insulator while submitted to an external dc field, is then described. The fundamentals, the experimental setup and the validation of this technique on flat samples and on power cables are presented and discussed.

75 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023368
2022892
2021224
2020478
2019561
2018629