Topic
Insulator (electricity)
About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.
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TL;DR: In this paper, the authors investigated the charging characteristics of alumina in vacuum with varying surface roughness, and the electric field distribution, and quantitatively discussed charge polarity and charge density on the surface for various types of electric field distributions.
Abstract: We investigated the charging characteristics of alumina in vacuum with varying surface roughness, and the electric field distribution. The charging on the alumina surface in vacuum is, in general, strongly influenced by field electron emission (FEE) and secondary electron emission avalanche (SEEA). We varied the surface roughness and the electric field distribution on the alumina surface in order to control the FEE and the SEEA. Under these conditions, we measured the 2-dimensional distribution of surface charging potential on the alumina surface. From the measurement results, we quantitatively discussed charge polarity and charge density on the surface for various types of electric field distributions. Finally, we successfully propose a concept of a charging control technique on the alumina insulator in vacuum for the improvement of electrical insulation performance on the alumina surface.
67 citations
Patent•
05 Aug 2004
TL;DR: In this article, a method for manufacturing a wiring and a semiconductor device, which do not require a photolithography step in connecting a pattern of an upper layer and a patterns of a lower layer, is presented.
Abstract: The present invention provides a method for manufacturing a wiring and a method for manufacturing a semiconductor device, which do not require a photolithography step in connecting a pattern of an upper layer and a pattern of a lower layer. According to the present invention, a composition including a conductive material is discharged locally and an electric conductor to function as a pillar is formed on a first pattern over a substrate, an insulator is formed to cover the electric conductor, the insulator is etched to expose a top surface of the electric conductor, and a second pattern is formed on the top surface of electric conductor that is exposed.
67 citations
TL;DR: In this paper, a vertical power MOSFET with an interdigitated drift region using high- $k$ (Hk) insulator was studied and it was shown that the specific on-resistance of the Hk-MOSET is comparable to that of the superjunction MOSET with the same breakdown voltage.
Abstract: A vertical power MOSFET with an interdigitated drift region using high- $k$ (Hk) insulator (Hk-MOSFET) is studied. Due to the fact that most of the electric displacement lines produced by the charges of the depleted drift region under reverse bias are through the Hk insulator, much heavier doping concentration can be used in the drift region when comparing with a conventional MOSFET with the same breakdown voltage. It is shown that the specific on-resistance of the Hk-MOSFET is comparable to that of the superjunction MOSFET (SJ-MOSFET) with the same breakdown voltage. The turn-on and turn-off times are found to be little longer than those of the conventional MOSFET and the SJ-MOSFET. The theoretical results of the electrical characteristics are in good agreement with the results from numerical simulations.
67 citations
Patent•
26 Feb 2001
TL;DR: In this paper, a semiconductor apparatus includes positive and negative side conductors for bridge-connecting semiconductor switches, constituted to a wide conductor, and laminated by sandwiching an insulator between them.
Abstract: A semiconductor apparatus includes positive and negative side conductors for bridge-connecting semiconductor switches, constituted to a wide conductor, and laminated by sandwiching an insulator between them. A semiconductor apparatus includes positive and negative side conductors extended from its case, and an electrolytic capacitor connected to the extension portion of the positive and negative side conductors. A power converter uses the semiconductor apparatus.
67 citations
TL;DR: In this paper, a simulation of the insulator surface charging in vacuum under the application of a high voltage, is presented for alumina (A1203) insulator and for insulators coated with cuprous oxide (Cu2O) and chromium oxide (Cr2O3).
Abstract: A computer simulation of the insulator surface charging in vacuum under the application of a high voltage, is presented for alumina (A1203) insulator and for alumina insulators coated with cuprous oxide (Cu2O) and chromium oxide (Cr2O3). It is shown that the mode of surface charge distribution is dependent on the secondary emission yield of the insulator surface. Mleasurements of insulator- electrode junction fields, using an electronic microforce balance, show the effect of surface coatings on the cathode and anode junction fields. High speed streak photography showing the time development of an arc in the case of coated insulators is presented. The experimental results support the insulator surface charging model which is simulated on a digital computer.
67 citations