Topic
Insulator (electricity)
About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.
Papers published on a yearly basis
Papers
More filters
Patent•
03 Mar 2009TL;DR: In this article, a dielectric waveguide is used as a waveguide for transmission of signals along the length of the coaxial cable, and the center conductor is further used to communicate an electrical signal between the first and second ends.
Abstract: A communication device consistent with certain implementations has a coaxial cable having length and first and second ends. The coaxial cable further has a central conductor, a dielectric insulator surrounding the central conductor, and an electric shield conductor surrounding the dielectric insulator. The dielectric insulator serves as a dielectric waveguide having a characteristic impedance Z at an operating frequency range. A termination for electrical energy coupled into or out of the dielectric insulator at approximately the characteristic impedance Z at the operating frequency range to utilize the dielectric insulator as a waveguide for transmission of signals along the length of the coaxial cable, and wherein the center conductor is further used to communicate an electrical signal between the first and second ends. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
279 citations
TL;DR: In this article, the authors combine scanning electron microscopy and electron-beam-induced current imaging with transport measurements to show that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects.
Abstract: Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.
270 citations
TL;DR: Electronic transport measurements on thin Bi2Se3 devices are reported and it is shown that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator.
Abstract: Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.
258 citations
[...]
TL;DR: This work theoretically predicts the dissipationless spin-Hall effect, without any accompanying charge current, in some classes of band insulators, including zero-gap semiconductors such as HgTe and narrow-gap SOCs such as PbTe, and is the first example of a nontrivial topological structure in a band insulator without any magnetic field.
Abstract: Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless spin-Hall effect, without any accompanying charge current, in some classes of band insulators, including zero-gap semiconductors such as HgTe and narrow-gap semiconductors such as PbTe. This effect is similar to the quantum-Hall effect in that all the states below the gap contribute and there occurs no dissipation. However, the spin-Hall conductance is not quantized even in two dimensions. This is the first example of a nontrivial topological structure in a band insulator without any magnetic field.
250 citations
TL;DR: In this paper, a top-gate with a high-k dielectric insulator was used to modulate the surface states of Bi2Se3 and showed that the density of surface states can be modulated via the electric field effect.
Abstract: Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.
246 citations