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Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.


Papers
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Patent
15 Jul 2004
TL;DR: In this article, a piezoelectric film is provided on the bottom conductive layer, disposed above the region between the first and second insulating patterns, so as to sandwich a top conductive film, spreading from the region of the second and third insulator patterns to the fourth insulator pattern.
Abstract: A film bulk acoustic resonator, includes first to fourth insulator patterns disposed apart from each other. The third and fourth insulator patterns are disposed opposite the second and first insulator patterns in relation to the first and second insulating patterns, respectively. A bottom conductive layer is disposed above the first and third insulator patterns spreading from a region between the first and second insulator patterns to the third insulator pattern. A piezoelectric film is provided on the bottom conductive layer, disposed above the region between the first and second insulating patterns. A top conductive layer is facing the bottom conductive layer so as to sandwich the piezoelectric film, spreading from the region between the first and second insulator patterns to the fourth insulator pattern.

48 citations

Patent
02 Jul 2002
TL;DR: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, undergoing abrupt metal-insulator transition when holes added therein this paper.
Abstract: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.

48 citations

Journal ArticleDOI
TL;DR: More than 200 power arc tests were carried out with original arrangements of overhead line insulators and arcing fittings for 20 kV, 110 kV and 220 kV in this paper.
Abstract: More than 200 power arc tests were carried out with original arrangements of overhead line insulators and arcing fittings for 20 kV, 110 kV and 220 kV. With an adequately modelled network, short-circuit currents in the range of 2 kA to 12.5 kA can be realized. Analysis of the measurements shows that a typical arc voltage time function can be attributed to each insulator type and arrangement. Using the measured variables, which were digitally recorded and stored on optical media, an existing numerical arc model has been enhanced, which can be applied in an electromagnetic transients program to reproduce the dynamic and random behaviour of power arcs for any insulator arrangement, current and system voltage.

48 citations

Journal ArticleDOI
TL;DR: In this article, the electrical performance of artificially contaminated non-ceramic insulators was investigated as a function of resting time. Resting time is defined as the time interval between the application of contamination and start of testing, while contamination severity and resting time were varied as parameters.
Abstract: The paper presents the results of an investigation on the electrical performance of artificially contaminated non-ceramic insulators as a function of resting time. Resting time is defined as the time interval between the application of contamination and start of testing. New (unaged), full scale, 69 kV non-ceramic insulators using different types of silicone rubber and ethylene propylene diene monomer (EPDM) rubber as weathersheds were studied. Their electrical performance was assessed using the clean fog technique. The applied voltage was kept constant throughout the test, while contamination severity and resting time were varied as parameters. The transfer of hydrophobicity through the contamination layer was demonstrated by flashover tests. This was also visually depicted by analyzing samples in a scanning electron microscope. The results show that resting time exerts little influence on the electrical performance of EPDM insulators. However, for silicone rubber insulators, resting time is shown to drastically improve its electrical performance. Experimental evidence indicates that the transfer or recovery process of hydrophobicity in silicone rubber insulators occurs as a progressive superposition of silicone oil layers with time. Thus, the net effect of resting such insulators before tests can be thought of as a gradual reduction of the effective contamination layer thickness. Such a reduction alters the way in which the contaminant layer interacts with external stressing agents, which could impact the insulator's electrical performance in service. In this work, an attempt has been made to identify and quantify the electrically significant changes introduced by a reduction in the effective contamination thickness. It is in the light of this reduced effective contamination layer that we explain how a seemingly wettable silicone rubber insulator is still able to hold the applied voltage without flashover.

48 citations

Patent
01 Feb 1974
TL;DR: In this paper, the process by which this device is made comprises the implantation of ions into an insulator, which is discharged during implantation by an electron beam or by a thin conductive surface layer previously deposited on the insulator.
Abstract: The process by which this device is made comprises the implantation of ions into an insulator. Surface charge on the insulator is discharged during implantation by an electron beam or by a thin conductive surface layer previously deposited on the insulator. Ion energy and dose are selected to embed ions into the insulating lattice to a sufficiently high local concentration to produce a zone of lower resistance which is the implanted zone. The dosage which presently appears to be a minimum dosage for providing a conductive zone in the insulative body is the order of 10 18 ions per square centimeter. Beam currents upward from 10 microampers per centimeter square implanted areas are satisfactory.

48 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023368
2022892
2021224
2020478
2019561
2018629