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Insulator (electricity)

About: Insulator (electricity) is a research topic. Over the lifetime, 15941 publications have been published within this topic receiving 108950 citations. The topic is also known as: electrical insulator.


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Patent
13 Aug 2001
TL;DR: In this article, a circuit board is configured so as to include not less than two wiring layers, an insulator layer for electric insulation between the wiring layers and an inner-via-hole conductive member provided in the insulator layers in a thickness direction of the insulation layer, for electric connection between the wires layers.
Abstract: A circuit board is configured so as to include not less than two wiring layers, an insulator layer for electric insulation between the wiring layers, and an inner-via-hole conductive member provided in the insulator layer in a thickness direction of the insulator layer, for electric connection between the wiring layers. The insulator layer is made of a composite material containing an organic resin and a material having a smaller thermal expansion coefficient than that of the organic resin, and includes a surface part, a core part, and a surface part laminated in the stated order, the surface part having a high content of the organic resin, the core part having a low content of the organic resin. The wiring layers have a land portion that is connected with the inner-via-hole conductive member, the land portion being embedded so as to be substantially in contact with the core part, and the inner-via-hole conductive member has a thickness substantially equal to a thickness of the core part. According to this configuration, a part of the metal foil is embedded in the insulator layer so as to be in contact with the core layer. Therefore, this makes it possible to provide a circuit board in which portions of the conductive material can be selectively compressed, and which hence is capable of ensuring stable connection between layers.

45 citations

Journal ArticleDOI
TL;DR: In this paper, the boundary element method (BEM) has been employed for electric field computations around post-type HV insulators of varying shapes and the maximum stress on the insulator surface has been determined.
Abstract: Capacitive-resistive field computations are carried out around post-type HV insulators of varying shapes. The boundary element method (BEM) has been employed for electric field computations. Different insulator shapes have been obtained by varying several parameters, which define the shape of the HV insulator contour. For each insulator shape, the maximum stress occurring on the insulator surface has been determined with no surface pollution, uniform surface pollution and also partial surface pollution. For partial pollution, several cases have been studied, in which different sections of the insulator surface are polluted. Furthermore, the effect of electrode radius on the maximum stress on insulator surface has been investigated. The results obtained are presented in this paper in detail.

45 citations

Patent
10 Apr 1986
TL;DR: In this article, the authors proposed to increase the DC breakdown voltage by providing space charge mitigating layers at least between an inside semiconductive layer and an insulator or between an outside semiconductor layer and the insulator.
Abstract: PURPOSE:To increase the DC breakdown voltage by providing space charge mitigating layers at least between an inside semiconductive layer and an insulator or between an outside semiconductive layer and the insulator. CONSTITUTION:Space charge mitigating layers 4-7 preventing the accumulation of space charges are provided at least between an inside semiconductive layer 1 located around a conductor N and an insulator 2 or between an outside semiconductive layer 3 and the insulator 2. The space charge mitigating layer 4 is provided between the inside semiconductive layer 1 and the insulator 2, and the space charge mitigating layer 5 is provided between the outside semiconductive layer 3 and the insulator 2, and space charge mitigating layers 6, 7 are provided both between the inside semiconductive layer 1 and the insulator 2 and between the outside semiconductive layer 3 and the insulator 2. The accumulation of space charges giving an adverse effect to the insulator 2 is thereby reduced, and a DC power cable with the high dielectric strength is obtained.

45 citations

Patent
Niemi Randolph Gary1
18 Apr 1983
TL;DR: In this paper, a method of manufacturing an improved electrical high voltage coated insulator is described, which involves applying and curing a one-part, room temperature curable silicone composition to the surface of an insulator, the insulator surface having a minimum designated arc resistance.
Abstract: A method of manufacturing an improved electrical high voltage coated insulator is described. The method involves applying and curing a one-part, room temperature curable silicone composition to the surface of an insulator, the insulator surface having a minimum designated arc resistance. The silicone composition is the product obtained by mixing in the substantial absence of moisture a specified polydimethylsiloxane fluid containing hydroxyl radicals, finely divided aluminum hydroxide filler, a silane of the formula R b Si(ON═X) 4-b and an optional condensation catalyst. The coating cures on exposure to atmospheric moisture to produce a surface adhered onto the insulator that resists the development of leakage currents and flashover failure upon exposure to electrical stress, moisture, contamination, and other outdoor weathering stresses.

45 citations

Journal ArticleDOI
TL;DR: In this paper, the mechanism behind the current modulation is investigated, and it is shown that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.
Abstract: We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500mV per decade operating on voltages less than 2V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

45 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023368
2022892
2021224
2020478
2019561
2018629