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Integral nonlinearity

About: Integral nonlinearity is a research topic. Over the lifetime, 1295 publications have been published within this topic receiving 21919 citations.


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Journal ArticleDOI
TL;DR: In this paper, a 1.5-V, 10-bit, 14.3-MS/s pipeline analog-to-digital converter was implemented in a 0.6/spl mu/m CMOS technology.
Abstract: A 1.5-V, 10-bit, 14.3-MS/s pipeline analog-to-digital converter was implemented in a 0.6 /spl mu/m CMOS technology. Emphasis was placed on observing device reliability constraints at low voltage. MOS switches were implemented without low-threshold devices by using a bootstrapping technique that does not subject the devices to large terminal voltages. The converter achieved a peak signal-to-noise-and-distortion ratio of 58.5 dB, maximum differential nonlinearity of 11.5 least significant bit (LSB), maximum integral nonlinearity of 0.7 LSB, and a power consumption of 36 mW.

966 citations

Journal ArticleDOI
09 Feb 2003
TL;DR: In this article, the authors proposed a digital background calibration technique as an enabling element to replace precision amplifiers by simple power-efficient open-loop stages, achieving more than 60% residue amplifier power savings over a conventional implementation.
Abstract: Precision amplifiers dominate the power dissipation in most high-speed pipelined analog-to-digital converters (ADCs). We propose a digital background calibration technique as an enabling element to replace precision amplifiers by simple power-efficient open-loop stages. In the multibit first stage of a 12-bit 75-MSamples/s proof-of-concept prototype, we achieve more than 60% residue amplifier power savings over a conventional implementation. The ADC has been fabricated in a 0.35-/spl mu/m double-poly quadruple-metal CMOS technology and achieves typical differential and integral nonlinearity within 0.5 LSB and 0.9 LSB, respectively. At Nyquist input frequencies, the measured signal-to-noise ratio is 67 dB and the total harmonic distortion is -74 dB. The IC consumes 290 mW at 3 V and occupies 7.9 mm/sup 2/.

555 citations

Journal ArticleDOI
Chi-Hung Lin1, Klaas Bult1
TL;DR: In this paper, a 10-b current steering CMOS digital-to-analog converter (DAC) with optimized performance for frequency domain applications is described, where the spurious free dynamic range (SFDR) is better than 60 dB for signals from DC to Nyquist.
Abstract: A 10-b current steering CMOS digital-to-analog converter (DAC) is described, with optimized performance for frequency domain applications. For sampling frequencies up to 200 MSample/s, the spurious free dynamic range (SFDR) is better than 60 dB for signals from DC to Nyquist. For sampling frequencies up to 400 MSample/s, the SFDR is better than 55 dB for signals from DC to Nyquist. The measured differential nonlinearity and integral nonlinearity are 0.1 least significant bit (LSB) and 0.2 LSB, respectively. The circuit is fabricated in a 0.35-/spl mu/m, single-poly, four-metal, 3.3 V, standard digital CMOS process and occupies 0.6 mm/sup 2/. When operating at 500 MSample/s, it dissipates 125 mW from a 3.3 V power supply. This DAC is optimized for embedded applications with large amounts of digital circuitry.

389 citations

Journal ArticleDOI
TL;DR: In this paper, a 10-bit 1-GSample/s current-steering CMOS digital-to-analog (D/A) converter is presented, where the measured integral nonlinearity is better than /spl plusmn/0.2 LSB.
Abstract: In this paper, a 10-bit 1-GSample/s current-steering CMOS digital-to-analog (D/A) converter is presented. The measured integral nonlinearity is better than /spl plusmn/0.2 LSB and the measured differential nonlinearity lies between -0.08 and 0.14 LSB proving the 10-bit accuracy. The 1-GSample/s conversion rate has been obtained by an, at transistor level, fully custom-designed thermometer decoder and synchronization circuit. The layout has been carefully optimized. The parasitic interconnect loads have been estimated and have been iterated in the circuit design. A spurious-free dynamic range (SFDR) of more than 61 dB has been measured in the interval from dc to Nyquist. The power consumption equals 110 mW for a near-Nyquist sinusoidal output signal at a 1-GHz clock. The chip has been processed in a standard 0.35-/spl mu/m CMOS technology and has an active area of only 0.35 mm/sup 2/.

379 citations

Journal ArticleDOI
TL;DR: A 20-ps time-to-digital converter (TDC) realized in 90-nm digital CMOS is used as a phase/frequency detector and charge pump replacement in an all-digital phase-locked loop for a fully-compliant Global System for Mobile Communications (GSM) transceiver.
Abstract: We propose and demonstrate a 20-ps time-to-digital converter (TDC) realized in 90-nm digital CMOS. It is used as a phase/frequency detector and charge pump replacement in an all-digital phase-locked loop for a fully-compliant Global System for Mobile Communications (GSM) transceiver. The TDC core is based on a pseudodifferential digital architecture that makes it insensitive to nMOS and pMOS transistor mismatches. The time conversion resolution is equal to an inverter propagation delay, which is the finest logic-level regenerative timing in CMOS. The TDC is self calibrating with the estimation accuracy better than 1%. It additionally serves as a CMOS process strength estimator for analog circuits in this large system-on-chip. Measured integral nonlinearity is 0.7 least significant bits. The TDC consumes 5.3 mA raw and 1.3 mA with power management from a 1.3-V supply.

366 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202325
202251
202126
202048
201942
201842