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Integrated circuit

About: Integrated circuit is a research topic. Over the lifetime, 82735 publications have been published within this topic receiving 1053525 citations. The topic is also known as: IC & chip.


Papers
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Journal ArticleDOI
TL;DR: In this article, a multithreshold-voltage CMOS (MTCMOS) based low-power digital circuit with 0.1-V power supply high-speed low power digital circuit technology was proposed, which has brought about logic gate characteristics of a 1.7ns propagation delay time and 0.3/spl mu/W/MHz/gate power dissipation with a standard load.
Abstract: 1-V power supply high-speed low-power digital circuit technology with 0.5-/spl mu/m multithreshold-voltage CMOS (MTCMOS) is proposed. This technology features both low-threshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period. This technology has brought about logic gate characteristics of a 1.7-ns propagation delay time and 0.3-/spl mu/W/MHz/gate power dissipation with a standard load. In addition, an MTCMOS standard cell library has been developed so that conventional CAD tools can be used to lay out low-voltage LSI's. To demonstrate MTCMOS's effectiveness, a PLL LSI based on standard cells was designed as a carrying vehicle. 18-MHz operation at 1 V was achieved using a 0.5-/spl mu/m CMOS process. >

1,338 citations

Journal ArticleDOI
03 Feb 2000-Nature
TL;DR: It is shown that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of ∼1 kHz in clocked sequential complementary circuits.
Abstract: Thin-film transistors based on molecular and polymeric organic materials have been proposed for a number of applications, such as displays and radio-frequency identification tags. The main factors motivating investigations of organic transistors are their lower cost and simpler packaging, relative to conventional inorganic electronics, and their compatibility with flexible substrates. In most digital circuitry, minimal power dissipation and stability of performance against transistor parameter variations are crucial. In silicon-based microelectronics, these are achieved through the use of complementary logic-which incorporates both p- and n-type transistors-and it is therefore reasonable to suppose that adoption of such an approach with organic semiconductors will similarly result in reduced power dissipation, improved noise margins and greater operational stability. Complementary inverters and ring oscillators have already been reported. Here we show that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of approximately 1 kHz in clocked sequential complementary circuits.

1,291 citations

Journal ArticleDOI
10 Nov 2011-ACS Nano
TL;DR: This report reports on the first integrated circuit based on a two-dimensional semiconductor MoS(2) transistors, capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits.
Abstract: Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS2 represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS2. Our integrated circuits are capable of operating as inverters, converting logical “1” into logical “0”, with room-temperature voltage gain higher than 1, making them suitable for incorporat...

1,244 citations

Book
01 Jan 1985
TL;DR: CMOS Circuit and Logic Design: The Complemenatry CMOS Inverter-DC Characteristics and Design Strategies.
Abstract: Introduction to CMOS Circuits. Introduction. MOS Transistors. MOS Transistor Switches. CMOS Logic. Circuit Representations. CMOS Summary. MOS Transistor Theory. Introduction. MOS Device Design Equation. The Complemenatry CMOS Inverter-DC Characteristics. Alternate CMOS Inverters. The Differential Stage. The Transmission Gate. Bipolar Devices. CMOS Processing Technology. Silicon Semiconductor Technology: An Overview. CMOS Technologies. Layout Design Rules. CAD Issues. Circuit Characterization and Performance Estimation. Introduction. Resistance Estimation. Capacitance Estimation. Inductance. Switching Characteristics. CMOS Gate Transistor Sizing. Power Consumption. Determination of Conductor Size. Charge Sharing. Design Margining. Yield. Scaling of MOS Transistor Dimensions. CMOS Circuit and Logic Design. Introduction. CMOS Logic Structures. Basic Physical Design of Simple Logic Gates. Clocking Strategies. Physical and Electrical Design of Logic Gates. 10 Structures. Structured Design Strategies. Introduction. Design Economics. Design Strategies. Design Methods. CMOS Chip Design Options. Design Capture Tools. Design Verification Tools. CMOS Test Methodolgies. Introduction. Fault Models. Design for Testability. Automatic Test Pattern Generation. Design for Manufacturability. CMOS Subsystem Design. Introduction. Adders and Related Functions. Binary Counters. Multipliers and Filter Structures. Random Access and Serial Memory. Datapaths. FIR and IIR Filters. Finite State Machines. Programmable Logic Arrays. Random Control Logic.

1,207 citations

Journal ArticleDOI
TL;DR: The feasibility of a new semiconductor memory concept that promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps is demonstrated.
Abstract: Non-volatile 'flash' memories are key components of integrated circuits because they retain their data when power is interrupted. Despite their great commercial success, the semiconductor industry is searching for alternative non-volatile memories with improved performance and better opportunities for scaling down the size of memory cells. Here we demonstrate the feasibility of a new semiconductor memory concept. The individual memory cell is based on a narrow line of phase-change material. By sending low-power current pulses through the line, the phase-change material can be programmed reversibly between two distinguishable resistive states on a timescale of nanoseconds. Reducing the dimensions of the phase-change line to the nanometre scale improves the performance in terms of speed and power consumption. These advantages are achieved by the use of a doped-SbTe phase-change material. The simplicity of the concept promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps.

1,207 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023105
2022228
2021759
20201,588
20192,030
20181,997