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Intermodulation

About: Intermodulation is a research topic. Over the lifetime, 7872 publications have been published within this topic receiving 91326 citations.


Papers
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01 Jan 1991
TL;DR: In this paper, the influence of the nonlinear distortions introduced by the high power amplifier (HPA) of the transmitter is examined, and the degradation in power efficiency due to intermodulation effects and backoff operating, as well as spectral degradations are investigated.
Abstract: Orthogonal Frequency Division Multiplexing (OFDM) in conjunction with a 4-DPSK modulation format has been proposed for the future digital audio broadcasting system (DAB), that should provide compact disk sound quality in portable, vehicular and fixed receivers. With properly chosen parameters, this system should be appropriate for both terrestrial and satellite transmission. In this paper the influence of the nonlinear distortions introduced by the high power amplifier (HPA) of the transmitter is examined. In particular, the degradation in power efficiency due to intermodulation effects and backoff operating, as well as spectral degradations are investigated.It is shown for three different kinds of limiting amplifier models, that even with an output backoff (OBO) in the region of 5-6 dB, the degradation of, e.g., a 512-carrier 4-DPSK/OFDM system relative to the linear case is below 1.7 dB, while the regenerated sidelobes of the transmitted spectrum are kept below -20 dB.

712 citations

Book
08 Feb 1990
TL;DR: This paper presents a meta-modelling architecture for two-Tone Intermodulation Products for RF/Microwave Computer-Aided Workstations foor MMIC Requirements and some examples of such products can be found in the literature on this topic.
Abstract: Foreword by David Leeson. Preface. 1. RF/Microwave Systems. 2. Lumped and Distributed Elements. 3. Active Devices. 4. Two-Port Networks. 5. Impedance Matching. 6. Microwave Filters. 7. Noise in Linear Two-Ports. 8. Small- and Large-Signal Amplifier Design. 9. Power Amplifier Design. 10. Oscillator Design. 11. Microwave Mixer Design. 12. RF Switches and Attenuators. 13. Microwave Computer-Aided Workstations foor MMIC Requirements. Appendix A: BIP: Gummel-Poon Bipolar Transistor Model. Appendix B: Level 3 MOSFET. Appendix C: Noise Parameters of GaAs MESFETs. Appendix D: Derivations for Unilateral Gain Section. Appendix E: Vector Representation of Two-Tone Intermodulation Products. Appendix F: Passive Microwave Elements. Index.

577 citations

Journal ArticleDOI
TL;DR: A method is described for linearizing a power amplifier by predistorting its input, particularly well suited to baseband implementation with digital signal processor hardware and its ability to suppress intermodulation products using only a small table is demonstrated.
Abstract: A method is described for linearizing a power amplifier by predistorting its input. It is particularly well suited to baseband implementation with digital signal processor hardware. In comparison with the most powerful previously published predistorter, it requires four orders of magnitude less memory, reduces convergence time by over three orders of magnitude, eliminates reconvergence time following a channel switch, and eliminates the need for a phase shifter in the feedback path. The predistorter structure is described. Its ability to suppress intermodulation products using only a small table is demonstrated. The effect of predistorter nonidealities (especially limited table size) on the power amplifier's output are analyzed. A fast adaptation algorithm is introduced. >

504 citations

Book
30 Apr 2003
TL;DR: In conclusion, signal pertubation IMD characterization techniques nonlinear analysis techniques non linear device modelling highly linear circuit design and nonlinear device modelling techniques are introduced.
Abstract: Introduction - signal pertubation IMD characterization techniques nonlinear analysis techniques nonlinear device modelling highly linear circuit design.

405 citations

Journal ArticleDOI
TL;DR: In this paper, a three-tone test setup is constructed to measure the phase of third-order intermodulation distortion products, and the measured results for a bipolar junction transistor and a MESFET amplifier are presented.
Abstract: Memory effects are defined as changes in the amplitude and phase of distortion components caused by changes in modulation frequency. These are particularly important in cancelling linearizer systems, e.g., when distortion is reduced by similar distortion in the opposite phase. This paper begins by describing electrical and electrothermal causes for memory effects. A three-tone test setup is then constructed to measure the phase of third-order intermodulation distortion products. This paper also presents the measured results for a bipolar junction transistor and a MESFET amplifier.

400 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202374
2022215
2021153
2020228
2019242
2018242