Ion beam

Abstract: Manipulating matter at the nanometre scale is important for many electronic, chemical and biological advances, but present solid-state fabrication methods do not reproducibly achieve dimensional control at the nanometre scale. Here we report a means of fashioning matter at these dimensions that uses low-energy ion beams and reveals surprising atomic transport phenomena that occur in a variety of materials and geometries. The method is implemented in a feedback-controlled sputtering system that provides fine control over ion beam exposure and sample temperature. We call the method "ion-beam sculpting", and apply it to the problem of fabricating a molecular-scale hole, or nanopore, in a thin insulating solid-state membrane. Such pores can serve to localize molecular-scale electrical junctions and switches and function as masks to create other small-scale structures. Nanopores also function as membrane channels in all living systems, where they serve as extremely sensitive electro-mechanical devices that regulate electric potential, ionic flow, and molecular transport across cellular membranes. We show that ion-beam sculpting can be used to fashion an analogous solid-state device: a robust electronic detector consisting of a single nanopore in a Si3N4 membrane, capable of registering single DNA molecules in aqueous solution.

Abstract: . On board the four Cluster spacecraft, the Cluster Ion Spectrometry (CIS) experiment measures the full, three-dimensional ion distribution of the major magnetospheric ions (H+, He+, He++, and O+) from the thermal energies to about 40 keV/e. The experiment consists of two different instruments: a COmposition and DIstribution Function analyser (CIS1/CODIF), giving the mass per charge composition with medium (22.5°) angular resolution, and a Hot Ion Analyser (CIS2/HIA), which does not offer mass resolution but has a better angular resolution (5.6°) that is adequate for ion beam and solar wind measurements. Each analyser has two different sensitivities in order to increase the dynamic range. First tests of the instruments (commissioning activities) were achieved from early September 2000 to mid January 2001, and the operation phase began on 1 February 2001. In this paper, first results of the CIS instruments are presented showing the high level performances and capabilities of the instruments. Good examples of data were obtained in the central plasma sheet, magnetopause crossings, magnetosheath, solar wind and cusp measurements. Observations in the auroral regions could also be obtained with the Cluster spacecraft at radial distances of 4–6 Earth radii. These results show the tremendous interest of multispacecraft measurements with identical instruments and open a new area in magnetospheric and solar wind-magnetosphere interaction physics. Key words. Magnetospheric physics (magnetopause, cusp and boundary layers; magnetopheric configuration and dynamics; solar wind - magnetosphere interactions)

Abstract: Techniques for the rapid preparation of atom-probe samples extracted directly from a Si wafer are presented and discussed. A systematic mounting process to a standardized microtip array allows approximately 12 samples to be extracted from a near-surface region and mounted for subsequent focused-ion-beam sharpening in a short period of time, about 2 h. In addition, site-specific annular mill extraction techniques are demonstrated that allow specific devices or structures to be removed from a Si wafer and analyzed in the atom-probe. The challenges presented by Ga-induced implantation and damage, particularly at a standard ion-beam accelerating voltage of 30 keV, are shown and discussed. A significant reduction in the extent of the damaged regions through the application of a low-energy “clean-up” ion beam is confirmed by atom-probe analysis of the damaged regions. The Ga+ penetration depth into {1 0 0} Si at 30 keV is ∼40 nm. Clean-up with either a 5 or 2 keV beam reduces the depth of damaged Si to ∼5 nm and

Abstract: When an amorphous solid is etched by an off‐normal incidence ion beam, a ripple topography often results. A theory explaining the origin of these waves is presented. For incidence angles close to the normal, we find that the ripple wave vector is parallel to the surface component of the beam direction, provided that longitudinal straggling of the beam is not too large. The ripple orientation is rotated by 90° when the beam is close to grazing incidence. The wavelength given by the theory varies as λ∼( f T)−1/2 exp(−ΔE/2kBT) for high temperatures T and low fluxes f, where ΔE is the activation energy for surface self‐diffusion. The predicted magnitude of the wavelength is in reasonable accord with experiments in this regime.

Abstract: The Handbook of Modern Ion Beam Materials Analysis, Second Edition is a compilation of updated techniques and data for use in the ion-beam analysis of materials The information presented is unavailable collectively from any other source, and places a strong emphasis on practical examples of the analysis techniques as they are applied to common problems Revised and updated from the popular handbook previously released in 1995, this edition is written and compiled by over 30 leading authorities in the field of ion beam analysis The book is an excellent introduction to the fundamentals and lab practices of ion beam analysis and is also useful as a teaching text for undergraduate senior or first-year graduate students This text is a comprehensive collection of nuclear and atomic data for the applications of ion beam materials analysis In addition, the DVD includes bonus info - both the Ion Beam Analysis Nuclear Data Library (IBANDL) and GUPIX Subroutines (CSA and YLS) for X-ray Database