Ion implantation

About: Ion implantation is a research topic. Over the lifetime, 36395 publications have been published within this topic receiving 454497 citations.

Focused ion beam technology and applications

Abstract: Ions of kiloelectron volt energies incident on a solid surface produce a number of effects: several atoms are sputtered off, several electrons are emitted, chemical reactions may be induced, atoms are displaced from their equilibrium positions, and ions implant themselves in the solid, altering its properties. Some of these effects, such as sputtering and implantation are widely used in semiconductor device fabrication and in other fields. Thus the capability to focus a beam of ions to submicrometer dimensions, i.e., dimensions compatible with the most demanding fabrication procedures, is an important development. The focused ion beam field has been spurred by the invention of the liquid metal ion source and by the utilization of focusing columns with mass separation capability. This has led to the use of alloy ion sources making available a large menu of ion species, in particular the dopants of Si and GaAs. The ability to sputter and to also induce deposition by causing breakdown of an adsorbed film has produced an immediate application of focused ion beams to photomask repair. The total number of focused ion beamfabrication systems in use worldwide is about 35, about 25 of them in Japan. In addition, there are many more simpler focused ion beam columns for specialized uses. The interest is growing rapidly. The following range of specifications of these systems has been reported: accelerating potential 3 to 200 kV, ion current density in focal spot up to 10 A/cm2, beam diameters from 0.05 to 1 μm, deflection accuracy of the beam over the surface ±0.1 μm, and ion species available Ga, Au, Si, Be, B, As, P, etc. Some of the applications which have been demonstrated or suggested include: mask repair, lithography (to replace electron beamlithography), direct, patterned, implantationdoping of semiconductors, ion induced deposition for circuit repair or rewiring, scanning ion microscopy, and scanning ion mass spectroscopy.

Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

Abstract: The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching packaging and arrays, and ultrasmall devices. >

Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

Abstract: Amorphous layers, approximately 4000 A thick, were formed on single‐crystal Si samples by implantation of 28Si ions at LN2 substrate temperature. Channeling‐effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure the subsequent epitaxial regrowth on the underlying crystalline substrates. For annealing temperatures between 450 and 575 °C, the growth rate showed a strong dependence on the substrate orientation with 〈100〉‐oriented samples exhibiting about a 25 times higher growth rate than 〈111〉‐oriented samples. Measurements of the growth rate on a series of samples cut in 5° angular increments show that there is a monotonic decrease from the 〈100〉 to the 〈111〉 orientation. A simple model is proposed to explain the observed orientation dependence.

stopping and range of ions in solids

Abstract: The stopping and range of ions in matter is physically very complex, and there are few simple approximations which are accurate. However, if modern calculations are performed, the ion distributions can be calculated with good accuracy, typically better than 10%. This review will be in several sections: a) A brief exposition of what can be determined by modern calculations. b) A review of existing widely-cited tables of ion stopping and ranges. c) A review of the calculation of accurate ion stopping powers.

Metal oxide semiconductor device forming a pn junction with a thin film transistor of metal oxide semiconductor of copper suboxide and manufacture thereof

Abstract: PURPOSE: To obtain an excellent PN junction by doping controlled metal oxide semiconductor with impurities, by controlling defects by introducing hydrogen or the like in the defects due to the excessive oxygen in a part of metal oxide semiconductor of copper suboxide or the like, and controlling the carrier density and the conductivity type. CONSTITUTION: A metal oxide semiconductor 25 is metal semiconductor obtained by oxidizing metal films 24, 24'. An insulating protective film is formed on the surfaces of an insulating film 26 and the metal oxide semiconductor 25. By leading out electrodes connected with source drain electrodes 24, 24', a transistor having a gate electrode 22 is formed. The carrier density and the conductivity type are controlled by eliminating oxygen defects. The P-type conductivity or the N-type conductivity, and the resistivity can be controlled by impurity doping. In these cases, ion implantation method or the like can be applied. Thereby a thin film transistor of high mobility can be formed in a large area by low temperature treatment.