About: Isotropic etching is a(n) research topic. Over the lifetime, 14653 publication(s) have been published within this topic receiving 228514 citation(s).
Papers published on a yearly basis
01 Jan 2002
Abstract: LITHOGRAPHY Introduction Historical Note: Lithography's Origins Photolithography Overview Critical Dimension, Overall Resolution, Line-Width Lithographic Sensitivity and Intrinsic Resist Sensitivity (Photochemical Quantum Efficiency) Resist Profiles Contrast and Experimental Determination of Lithographic Sensitivity Resolution in Photolithography Photolithography Resolution Enhancement Technology Beyond Moore's Law Next Generation Lithographies Emerging Lithography Technologies PATTERN TRANSFER WITH DRY ETCHING TECHNIQUES Introduction Dry Etching: Definitions and Jargon Plasmas or Discharges Physical Etching: Ion Etching or Sputtering and Ion-Beam Milling Plasma Etching (Radical Etching) Physical/Chemical Etching PATTERN TRANSFER WITH ADDITIVE TECHNIQUES Introduction Silicon Growth Doping of Si Oxidation of Silicon Physical Vapor Deposition Chemical Vapor Deposition Silk-Screening or Screen-Printing Sol-Gel Deposition Technique Doctors' Blade or Tape Casting Plasma Spraying Deposition and Arraying Methods of Organic Layers in BIOMEMS Thin versus Thick Film Deposition Selection Criteria for Deposition Method WET BULK MICROMACHINING Introduction Historical Note Silicon Crystallography Silicon As Substrate Silicon As A Mechanical Element In MEMS Wet Isotropic And Anisotropic Etching Alignment Patterns Chemical Etching Models Etching With Bias And/Or Illumination Of The Semiconductor Etch-Stop Techniques Problems With Wet Bulk Micromachining SURFACE MICROMACHINING Introduction Historical Note Mechanical Properties of Thin Films Surface Micromachining Processes Poly-Si Surface Micromachining Modifications Non-Poly-Si Surface Micromachining Modifications Materials Case Studies LIGA AND MICROMOLDING Introduction LIGA-Background LIGA and LIGA-Like Process Steps A COMPARISON OF MINIATURIZATION TECHNIQUES: TOP-DOWN AND BOTTOM-UP MANUFACTURING Introduction Absolute and Relative Tolerance in Manufacturing Historical Note: Human Manufacturing Section I: Top-Down Manufacturing Methods Section II: Bottom-Up Approaches MODELING, BRAINS, PACKAGING, SAMPLE PREPARATION AND NEW MEMS MATERIALS Introduction Modeling Brains In Miniaturization Packaging Substrate Choice SCALING, ACTUATORS, AND POWER IN MINIATURIZED SYSTEMS Introduction Scaling Actuators Fluidics Scaling In Analytical Separation Equipment Other Actuators Integrated Power MINIATURIZATION APPLICATIONS Introduction Definitions and Classification Method Decision Three OVERALL MARKET For MICROMACHINES Introduction Why Use Miniaturization Technology ? From Perception to Realization Overall MEMS Market Size MEMS Market Character MEMS Based on Si Non-Silicon MEMS MEMS versus Traditional Precision Engineering The Times are a'Changing APPENDICES Metrology Techniques WWW Linkpage Etch Rate for Si, SiO2 Summary of Top-Down Miniaturization Tools Listing of names of 20 amino acids & their chemical formulas Genetic code Summary of Materials and Their Properties for Microfabrication References for Detailed Market Information on Miniature Devices MEMS Companies Update Suggested Further Reading Glossary Symbols used in Text INDEX Each chapter also contains sections of examples and problems
Abstract: This letter describes a technique that can be used to produce well‐defined features of gold. The technique involves patterning of a self‐assembled monolayer (SAM) on a gold substrate using an elastomer stamp (fabricated either from a phenol‐formaldehyde polymer or polydimethylsiloxane), followed by selective etching in an aqueous, basic solution of cyanide ion and dissolved dioxygen (1M KOH, 0.1 M KCN). Electrically conductive structures of gold with dimensions as small as 1 μm have been produced using this procedure. Once a rubber stamp is fabricated, patterning and etching of gold substrates is straightforward. This method is convenient, does not require routine access to clean rooms and photolithographic equipment, and can be used to produce multiple copies of a pattern.
TL;DR: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching, and introduces templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithographic, and block-copolymer masks.
Abstract: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.
•10 Jul 2007
Abstract: Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
•21 Nov 2007
Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.