Topic
Isotropic etching
About: Isotropic etching is a research topic. Over the lifetime, 14653 publications have been published within this topic receiving 228514 citations.
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TL;DR: The wet etching of GaN, AlN, and SiC is reviewed in this paper, including conventional etching in aqueous solutions, electrochemical etch in electrolytes and defect-selective chemical etched in molten salts.
Abstract: The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical etching in molten salts. The mechanism of each etching process is discussed. Etching parameters leading to highly anisotropic etching, dopant-type/bandgap selective etching, defect-selective etching, as well as isotropic etching are discussed. The etch pit shapes and their origins are discussed. The applications of wet etching techniques to characterize crystal polarity and defect density/distribution are reviewed. Additional applications of wet etching for device fabrication, such as producing crystallographic etch profiles, are also reviewed.
680 citations
TL;DR: In this paper, metal-assisted etching of silicon in HF/H2O2//H 2O solutions with Ag nanoparticles as catalyst agents was investigated, and the dissolution mechanisms were discussed on the basis of a localized hole injection from the Ag particles into Si and in terms of the well known chemistry of Si dissolution in HF-based chemical and electrochemical systems.
595 citations
TL;DR: Track membrane (TM) technology is an example of industrial application of track etching technique as discussed by the authors, and it has been used in many applications, such as process filtration, cell culture, and laboratory filtering.
593 citations
TL;DR: This work demonstrates a highly efficient, nondestructive electrochemical route for the delamination of CVD graphene film from metal surfaces, which affords the advantages of high efficiency, low-cost recyclability, and minimal use of etching chemicals.
Abstract: The separation of chemical vapor deposited (CVD) graphene from the metallic catalyst it is grown on, followed by a subsequent transfer to a dielectric substrate, is currently the adopted method for device fabrication. Most transfer techniques use a chemical etching method to dissolve the metal catalysts, thus imposing high material cost in large-scale fabrication. Here, we demonstrate a highly efficient, nondestructive electrochemical route for the delamination of CVD graphene film from metal surfaces. The electrochemically delaminated graphene films are continuous over 95% of the surface and exhibit increasingly better electronic quality after several growth cycles on the reused copper catalyst, due to the suppression of quasi-periodical nanoripples induced by copper step edges. The electrochemical delamination process affords the advantages of high efficiency, low-cost recyclability, and minimal use of etching chemicals.
569 citations
TL;DR: A gas-phase plasma hydrocarbonation reaction is presented to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanot tubes in near-pristine form and is scalable and compatible with existing semiconductor processing for future integrated circuits.
Abstract: Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits
540 citations