Topic
Isotropic etching
About: Isotropic etching is a research topic. Over the lifetime, 14653 publications have been published within this topic receiving 228514 citations.
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TL;DR: In this article, a facile fabricating method has been established for large-area uniform silicon nanowires arrays, which were obtained by single crystals and epitaxial on the substrate.
Abstract: A facile fabricating method has been established for large-area uniform silicon nanowires arrays All silicon nanowires obtained were single crystals and epitaxial on the substrate Six kinds of silicon wafers with different types, surface orientations, and doping levels were utilized as starting materials With the catalysis of silver nanoparticles, room-temperature mild chemical etching was conducted in aqueous solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) The corresponding silicon nanowires arrays with different morphologies were obtained The silicon nanowires possess the same type and same doping level of the starting wafer All nanowires on the substrate have the same orientation For instance, both (100)- and (111)-oriented p-type wafers produced silicon nanowires in the (100) direction For every kind of silicon wafer, the effect of etching conditions, such as components of etchant, temperature, and time, were systemically investigated This is an appropriate method to produce a
527 citations
TL;DR: Novel Ni-Co-Prussian-blue-analog nano-cages consisting of pyramid-like walls were prepared via a facile chemical etching process with ammonia at room temperature and exhibit enhanced electrocatalytic activity and excellent stability toward the oxygen-evolution reaction.
Abstract: Novel Ni-Co-Prussian-blue-analog nano-cages consisting of pyramid-like walls were prepared via a facile chemical etching process with ammonia at room temperature. After annealing in air, the derived Ni-Co mixed oxide nanocages exhibit enhanced electrocatalytic activity and excellent stability toward the oxygen-evolution reaction.
524 citations
TL;DR: Silicon nanowire (SiNW)-based solar cells on glass substrates have been fabricated by wet electroless chemical etching (using silver nitrate and hydrofluoric acid) of 2.7 microm multicrystalline p(+)nn(+) doped silicon layers thereby creating the nanowires structure.
Abstract: Silicon nanowire (SiNW)-based solar cells on glass substrates have been fabricated by wet electroless chemical etching (using silver nitrate and hydrofluoric acid) of 2.7 μm multicrystalline p+nn+ doped silicon layers thereby creating the nanowire structure. Low reflectance ( 90% at 500 nm) have been measured. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM1.5 illumination were 450 mV and 40 mA/cm2, respectively at a maximum power conversion efficiency of 4.4%.
487 citations
TL;DR: In this article, a brief review of dry etching as applied to pattern transfer, primarily in silicon technology, is presented, focusing on concepts and topics for etching materials of interest in micromechanics.
Abstract: This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching (RIE). An important feature of RIE is its ability to achieve etch directionality. The mechanism behind this directionality and various plasma chemistries to fulfil this task will be explained. Multi-step plasma chemistries are found to be useful to etch, release and passivate micromechanical structures in one run successfully. Plasma etching is extremely sensitive to many variables, making etch results inconsistent and irreproducible. Therefore, important plasma parameters, mask materials and their influences will be treated. Moreover, RIE has its own specific problems, and solutions will be formulated. The result of an RIE process depends in a non-linear way on a great number of parameters. Therefore, a careful data acquisition is necessary. Also, plasma monitoring is needed for the determination of the etch end point for a given process. This review is ended with some promising current trends in plasma etching.
456 citations
TL;DR: In this article, it was shown that silicon is isotropically etched by exposure to XeF2(gas) at T = 300 K. The implication of these experimental results for understanding mechanisms associated with plasma etching (including RIE) will be discussed.
Abstract: It is shown that silicon is isotropically etched by exposure to XeF2(gas) at T=300 K. Si etch rates as large as 7000 A/min were observed for P (XeF2) <1.4×10−2 Torr and the etch rate varies linearly with P (XeF2). There was no observable etching of SiO2, Si3N4, or SiC, demonstrating an extremely large selectivity between silicon and its compounds. Therefore, thin masks constructed from silicon compounds can be used for pattern delineation. The implication of these experimental results for understanding mechanisms associated with plasma etching (including RIE) will be discussed.
456 citations