About: Junction temperature is a(n) research topic. Over the lifetime, 5058 publication(s) have been published within this topic receiving 58643 citation(s).
Papers published on a yearly basis
TL;DR: Improved materials would not only help to cool advanced electronics but could also provide energy benefits in refrigeration and when using waste heat to generate electrical power.
Abstract: In a typical thermoelectric device, a junction is formed from two different conducting materials, one containing positive charge carriers (holes) and the other negative charge carriers (electrons). When an electric current is passed in the appropriate direction through the junction, both types of charge carriers move away from the junction and convey heat away, thus cooling the junction. Similarly, a heat source at the junction causes carriers to flow away from the junction, making an electrical generator. Such devices have the advantage of containing no moving parts, but low efficiencies have limited their use to specialty applications, such as cooling laser diodes. The principles of thermoelectric devices are reviewed and strategies for increasing the efficiency of novel materials are explored. Improved materials would not only help to cool advanced electronics but could also provide energy benefits in refrigeration and when using waste heat to generate electrical power.
TL;DR: It is demonstrated that improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3thermoelectric materials using a n-type film in a one-leg thermoelectrics device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.8 K.
Abstract: PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb) 2 (Se,Te) 3 thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like (typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.
01 Mar 2011-Nature Nanotechnology
TL;DR: It is reported that the contact resistance in a palladium-graphene junction exhibits an anomalous temperature dependence, dropping significantly as temperature decreases to a value of just 110 ± 20 Ω µm at 6 K, which is two to three times the minimum achievable resistance.
Abstract: A high-quality junction between graphene and metallic contacts is crucial in the creation of high-performance graphene transistors. In an ideal metal-graphene junction, the contact resistance is determined solely by the number of conduction modes in graphene. However, as yet, measurements of contact resistance have been inconsistent, and the factors that determine the contact resistance remain unclear. Here, we report that the contact resistance in a palladium-graphene junction exhibits an anomalous temperature dependence, dropping significantly as temperature decreases to a value of just 110 ± 20 Ω µm at 6 K, which is two to three times the minimum achievable resistance. Using a combination of experiment and theory we show that this behaviour results from carrier transport in graphene under the palladium contact. At low temperature, the carrier mean free path exceeds the palladium-graphene coupling length, leading to nearly ballistic transport with a transfer efficiency of ~75%. As the temperature increases, this carrier transport becomes less ballistic, resulting in a considerable reduction in efficiency.
01 Aug 2004-Journal of Crystal Growth
TL;DR: In this paper, the degradation rate of white LEDs was investigated and it was shown that the degradation process depends on both the junction temperature and the amplitude of short-wavelength radiation.
Abstract: Long life, on the order of 50,000–100,000 h, is one of the key features of light-emitting diodes (LEDs) that has attracted the lighting community to this technology. White LEDs have yet to demonstrate this capability. The goal of the study described in this manuscript was to understand what affects the long-term performance of white LEDs. Different types of LEDs have different degradation mechanisms. As a starting point, this study considered a commonly available commercial package, the 5 mm epoxy-encapsulated phosphor-converted (YAG:Ce) white LED. Based on past studies, it was hypothesized that junction heat and the amount of short-wavelength emission would influence the degradation rate of 5 mm type white LEDs, mainly due to yellowing of the epoxy encapsulant. Two groups of white LEDs were life-tested. The LEDs in one group had similar junction temperatures but different amplitudes for the short-wavelength radiation, and the LEDs in the second group had similar amplitudes for the short-wavelength radiation but different junction temperatures. Experimental results showed that the degradation rate depends on both the junction temperature and the amplitude of short-wavelength radiation. However, the temperature effect was much greater than the short-wavelength amplitude effect. Furthermore, the phosphor medium surrounding the die behaves like a lambertian scatterer. As a result, some portion of the light circulates between the phosphor layer and the reflector cup, potentially increasing the epoxy-yellowing issue. To validate this theory, a second experiment was conducted with LEDs that had the phosphor layer both close to the die and further away. The results showed that the LEDs with the phosphor layer away from the die degraded at a slower rate.
24 Sep 2004-Applied Physics Letters
TL;DR: In this paper, a theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) was developed, and an expression for dVf∕dT was derived that took into account all relevant contributions to the temperature dependence of Vf including the intrinsic carrier concentration, the band-gap energy, and the effective density of states.
Abstract: A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf∕dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the band-gap energy, and the effective density of states. Experimental results on the junction temperature of GaN ultraviolet light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage (dVf∕dT) is found. A linear relation between the junction temperature and the forward voltage is found.
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