Showing papers on "Junction temperature published in 1978"

Monolithic CMOS digital temperature measurement circuit

Abstract: A monolithic integrated complementary metal oxide semiconductor (CMOS) circuit senses internal junction temperature and converts it to a binary coded decimal output signal. The circuit compares a temperature dependent junction voltage with a bandgap reference voltage controlled by a very stable amplifier. The comparison differential is then converted to a binary coded decimal output signal by an analog to digital converter. The circuit utilizes parasitic bipolar NPN transistor elements formed from a substrate of the chip in a conventional CMOS fabrication process. The principles of the present invention are also broadly applicable to other semiconductor technologies such as integrated injection logic (I 2 L).

Heat flow asymmetry on a junction of quartz with graphite

Abstract: The thermal conductivity of a quartz with graphite junction is studied in the temperature range 6 to 95 K. The junction rectification reaches 70% for a temperature difference of 40 K between the thermometers. A quartz junction of the material identical on both sides of the contact, produced for control, does not show the rectification phenomenon. [Russian Text Ignored].

Temperature compensated bias circuit for semiconductor lasers

Abstract: Within a power supply circuit for a semiconductor laser, output current is maintained constant at each temperature level over an operating range and the magnitude of that constant current is varied directly with temperature to maintain the light output of the laser substantially constant over the operating temperature range. In the preferred embodiment, the negative temperature coefficient characteristic of the base-emitter junction voltage for bipolar transistors is utilized to compensate for the negative temperature coefficient characteristic of the light output from the semiconductor laser.

The surge capability of high voltage rectifiers

Abstract: The failure mode under forward surge current conditions is investigated from theoretical and experimental viewpoints. The hypothesis that current filamentation occurs when the intrinsic carrier concentration becomes comparable to the injected concentration is confirmed by experimental measurements on rectifiers. The device junction temperature is deduced from separate measurements of the forward voltage drop, under pulsed conditions, as a function of case temperature and current. The measured time-dependence of junction temperature is in good agreement with the predictions of a simple one-dimensional heat flow model.

400 GHz Band Operation of Cooled Silicon IMPATT Diodes

Abstract: Cooled silicon IMPATT diodes for submillimeter-wave CW operation were investigated. Small-signal diode admittance was calculated, including the temperature effect, and liquid nitrogen cooled operation was tested in the submillimeter-wave region. The oscillation frequency increase was observed in low junction temperature and output power characteristics were improved in 300 GHz and 400 GHz bands. At 412 GHz, an output power of 2.2 mW with 0.047% conversion efficiency and at 295 GHz, 4.5 mW with 0.13%, were obtained by ion implanted p+ -n-n+ SDR diodes. The highest oscillation frequency observed was 430 GHz.

Darlington connection circuit of transistors

Abstract: PURPOSE:To prevent the increase in junction temperature, by imserting the voltage dropping element at the collector side of the output stage transistor, and by decreasing the saturation voltage of collector without decreasing the current amplification degree