Topic
Junction temperature
About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.
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Patent•
26 Jan 1998TL;DR: In this paper, a heat-conducting substrate (12') is disposed in thermal contact with a high temperature region (23) during operation, heat flows from the high temperature regions into the heat conducting substrate, from which the heat flows into the electrical power generator, and the thermal gradient generates electrical power and drives an electrical component.
Abstract: A device (100) for generating power to run an electronic component (38) The device includes a heat-conducting substrate (12') (composed, eg, of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region (23) During operation, heat flows from the high temperature region (23) into the heat-conducting substrate (12'), from which the heat flows into the electrical power generator A thermoelectric material (14) (eg, a Bi2Te3-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate (12') A low temperature region (21) is located on the side of the thermoelectric material (12) opposite that of the high temperature region (23) The thermal gradient generates electrical power and drives an electrical component (38)
31 citations
TL;DR: In this article, a magnetohydrodynamic (MHD) pump has been designed for active control of the flow rate of the liquid metal that impinges against the baseplate of the power module.
Abstract: Power modules are the most common components to fail in power converters that are employed in mass transportation systems, thus leading to high unscheduled maintenance cost. While operating, high junction temperature swings occur that result in high thermomechanical stress within the structure of the power module, reducing the lifetime of the module. Liquid metals as a cooling medium received so far little attention in the area of power semiconductor cooling, despite being able to remove high heat fluxes. This paper shows for the first time how liquid metal is used to reduce actively the junction temperature swing. A magnetohydrodynamic (MHD) pump has been designed for this purpose allowing active control of the flow rate of the liquid metal that impinges against the baseplate of the module. The pump has been 3-D printed and is attached directly to the power module. A closed-loop temperature control system is implemented, able to estimate the insulated-gate bipolar transistor's junction temperature, and thus, controls the MHD power. This paper presents simulation and experimental results showing reductions in the temperature swing over the full load cycle with 12 °C as the highest observed reduction rate. This paper also shows detailed designs of the MHD pump and the controller hardware.
31 citations
01 Sep 2015
TL;DR: In this paper, a simple approach of sensorless junction temperature estimation for SiC power MOSFET devices is proposed, where the junction temperature is derived in real-time by finding the instantaneous on-state resistance which is temperature sensitive and can be used as an indicator for device thermal estimation.
Abstract: A simple approach of sensorless junction temperature estimation is proposed for SiC power MOSFET devices. The junction temperature is derived in real-time by finding the instantaneous on-state resistance which is temperature sensitive and can be used as an indicator for device thermal estimation. Based on the scheme, a high-speed circuit is designed to quickly detect the on-state resistance and estimate the corresponding internal temperature. This circuit is able to provide fast thermal estimation within microseconds without using any temperature sensors. The scheme is tested on the SiC power MOSFET C2M0080120D with the laboratory hardware measurement results verified.
31 citations
01 Sep 2016
TL;DR: In this article, a simple junction temperature estimator is developed for a maximum junction temperature limitation and the capability to be applied for further algorithm relying on the junction temperature, referring to active thermal control.
Abstract: The junction temperature of power semiconductors in power converters must not exceed its maximum limits and it is of major importance for several failure mechanisms. But still, the junction temperature is hard to access. Direct measurement is not practical for industrial applications, indirect measurements require substantial effort and available junction temperature models have high calculation effort. This work develops a simple junction temperature estimator, which is applied for a maximum junction temperature limitation and the capability to be applied for further algorithm relying on the junction temperature, referring to active thermal control. It is experimentally shown, that a second order estimator is sufficient to achieve high bandwidth estimation.
31 citations
Patent•
24 Jul 2013
TL;DR: In this article, a radiation heat dissipation coating for reducing the light-emitting diode (LED) chip junction temperature and a preparation method thereof was disclosed, which comprises the following components in percentage by weight: 30-70% of macromolecular resin, 5-40% of solvent, 10-30% of far infrared ceramic powder, 5 -20% of silicon carbide, 0.5-3% of cerium oxide and 1-5% of addition agent.
Abstract: The invention discloses a radiation heat dissipation coating for reducing the light-emitting diode (LED) chip junction temperature and a preparation method thereof. The coating comprise the following components in percentage by weight: 30-70% of macromolecular resin, 5-40% of solvent, 10-30% of far infrared ceramic powder, 5-20% of silicon carbide, 0.5-3% of cerium oxide and 1-5% of addition agent. By utilizing the radiation heat dissipation coating disclosed by the invention, the LED chip junction temperature can be greatly lowered, and the service life of an LED chip in a lamp can be prolonged.
31 citations