Topic
Junction temperature
About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.
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28 Oct 2013
TL;DR: In this paper, a gate drive-RDS-on-L-C resonant model is implemented to demonstrate the mechanism of power MOSFET turn-on dynamics.
Abstract: Junction temperature sensing requirements for fast MOSFET junction temperature control and high power fast switching power converter protection are not easily met with non-intrusive techniques. This paper presents a non-invasive circuit model-based sensing method suitable for a high bandwidth, hard-switching converter power MOSFET junction temperature estimation without any additional temperature detector. For the purpose of demonstrating MOSFET junction temperature sensing, a chopper circuit is used. The ringing superimposed with a circuit load current is used for MOSFET junction temperature estimation. A `gate drive-RDS-on-L-C' resonant model is implemented indicating the mechanism of power MOSFET turn-on dynamics. Modeling includes the gate-drive output parasitics, power MOSFET intrinsic parameters, PCB parasitics and load parasitics. To evaluate the methodology, LTSpice Simulation and experimental results are studied.
30 citations
TL;DR: In this paper, the potentialities of a high temperature polyimide from HD Microsystems, for SiC power device passivation, at temperature up to 300^oC, were investigated.
30 citations
20 Mar 2001
TL;DR: New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented and have been found to be efficient and robust in all cases examined.
Abstract: New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.
30 citations
TL;DR: In this paper, the authors developed a technique to monitor the facet heating in semiconductor lasers and to correlate these measurements with device performance and reliability, which can be applied to any kind of edge-emitting lasers or laser bars.
30 citations
TL;DR: In this paper, a new packaging structure was proposed by introducing a thin encapsulation layer doped with 0.4 wt% AlN nanoparticles (NPs) and uniform quartz lens simultaneously.
Abstract: This paper investigated the optical and thermal performance of the nitride-based ultraviolet light-emitting diodes fabricated by the eutectic flip-chip method. A new packaging structure was proposed by introducing a thin encapsulation layer doped with 0.4 wt% AlN nanoparticles (NPs) and uniform quartz lens simultaneously. Experimental results showed that the packaging structure proposed in this paper could significantly enhance the light output power, reduce the junction temperature, and increase the emission angle compared with the encapsulation layer consisting silicone only. When the NPs concentration increased from 0.1 to 0.4 wt%, the light output power increased from 7.6% to 17.4% at the forward current of 800 mA. Meanwhile, the junction temperature decreased by 5.7 °C, while the emission angle increased by 11.3°. What is more, it was found that the enhancement of light output power depended on the NPs concentration and showed the maximum at the concentration of 0.4 wt%. The enhanced light output power was attributed to the additional light scattering and the increased average refractive index resulted from the NPs introduced in the proposed package structure.
30 citations