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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


Papers
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19 May 2015
TL;DR: A working sensor system that allows real-time junction temperature measurement of conventional IGBT power modules with very good sensor properties and in a way that is suitable for series production is shown.
Abstract: The junction temperature of an IGBT power module is a key parameter for its optimal operation and reliability. In recent years different sensor systems were presented for real-time TJmeasurement, but none of these solutions could prove its functionality during the real inverter operation. For the first time this paper presents an IGBT gate driver with integrated real-time TJ-measurement and investigates its properties within a working voltage source inverter. The measurement is based on the on-chip internal gate resistor RGi, whose temperature is determined by superimposing the negative gate voltage with a high-frequency identification signal. Therefore the driver consists of a small control unit that manages the entire identification process during the regular switching operation of the IGBT and calculates its junction temperature using a pre-programmed reference sensor curve. Within an automatic one-point calibration at room temperature a certain power modules can be adjusted to this sensor curve. To demonstrate the functionality of the TJ-measurement during inverter operation the driver is integrated into one phase of a voltage source inverter. The junction temperature variations that can be measured at low-frequency phase currents and during the emulation of different load-profiles show very good agreement with the temperature that is measured with an IRcamera. Thereby the so-called TJ-IGBT-Driver offers a very good temperature and time resolution of 1 K and 2.5 ms. In summary, this paper shows a working sensor system that allows real-time junction temperature measurement of conventional IGBT power modules with very good sensor properties and in a way that is suitable for series production.

29 citations

Proceedings ArticleDOI
Yanqun Shen1, Yan Xiong1, Jian Jiang1, Yan Deng1, Xiangning He1, Zhaohui Zeng 
09 Jul 2006
TL;DR: In this article, the authors describe the design of the automatic measurement system for switching energy losses of power semiconductor devices, where automatic regulation of DC link voltage, collector current, gate drive voltage, gate resistance, and device junction temperature can be realized.
Abstract: Design of the automatic measurement system for switching energy losses of power semiconductor devices is described in the paper. Automatic regulation of DC link voltage, collector current, gate drive voltage, gate resistance, and device junction temperature can be realized. Switching energy losses of the devices under different conditions can be obtained conveniently with this system. Based on plenty of measured data from the automatic measurement system and the corresponding analysis, Different methods including two traditional curve fitting method based on different function types and neural network (NN) curve fitting method have been tried to modeling the switching energy losses. All of these methods can take into account the above 5 parameters and are implemented in a 1200V/20A NPT IGBT. The modeling result shows that the NN has a better accuracy when the measured data is sufficient enough to describe the whole operation area of the device.

29 citations

Patent
02 Jan 2003
TL;DR: In this paper, an estimation of the temperature of a semiconductor device as a function of the electrical current flowing across the corresponding semiconductor junction is presented, and an alarm signal is set in the event that the output temperature exceeds a predetermined temperature threshold value.
Abstract: An apparatus is disclosed that provides an estimate of the semiconductor junction temperature of a semiconductor device as a function of the electrical current flowing across the corresponding semiconductor junction. The apparatus includes a current sensor that samples and measures the current flowing across the semiconductor junction and provides an output signal indicative of the measured value to a current-to-temperature converter. The current-to-temperature converter estimates the temperature of the semiconductor junction using equations that include constants empirically derived for the particular device configuration including cooling and mounting methods used with it. The current-to-temperature converter provides an output temperature signal that is compared to a predetermined temperature threshold value, and in the event that the output temperature signal exceeds the predetermined temperature threshold value, an alarm signal is set.

29 citations

Proceedings ArticleDOI
19 Mar 2006
TL;DR: In this paper, the authors present an all-SiC scaled prototype that is modeled after the DC-DC converter used in the Prius II to establish a high voltage DC bus interconnecting the motor and generator.
Abstract: The potential increased power density and high temperature capability of silicon carbide makes it an ideal candidate for use in future hybrid electric vehicle (HEV) technology. A secondary cooling system is required to maintain an 85/spl deg/C base plate temperature for silicon based power electronics; but by creating a silicon carbide (SiC) based replacement this requirement could be relaxed. One anticipated benefit, among many, is that the secondary cooling loop could be eliminated and instead interfaced with the engine coolant system designed to maintain a maximum temperature of 105/spl deg/C. The purpose of this paper is to present an all-SiC scaled prototype that is modeled after the DC-DC converter used in the Prius II to establish a high voltage DC bus interconnecting the motor and generator. The design uses a SiC JFET and SiC Schottky diode as the switching pair of a 1 kW scale model that investigates an inherently safe approach for use in future HEVs. The ability to parallel these unipolar devices results in a scalable device technology capable of achieving high-current, 600-V SiC switch technology in the near term that offers a potential 100/spl deg/C increase in junction temperature above that rated for comparable silicon IGBTs.

29 citations

Journal ArticleDOI
TL;DR: In this paper, the authors estimate the increase in junction temperature with technology scaling and show that under normal operating conditions, the junction temperature is increasing 1.45/spl times/generation.
Abstract: Burn-in is a quality improvement procedure challenged by the high leakage currents that are rapidly increasing with IC technology scaling. These currents are expected to increase even more under the new burn-in environments leading to higher junction temperatures, possible thermal runaway, and yield loss during burn-in. The authors estimate the increase in junction temperature with technology scaling. Their research shows that under normal operating conditions, the junction temperature is increasing 1.45/spl times//generation. The increase in junction temperature under the burn-in condition was found to be exponential. The range of optimal burn-in voltage and temperature is reduced significantly with technology scaling.

29 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303