Topic
Junction temperature
About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.
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TL;DR: In this article, an experimental and numerical investigation on the thermofluidic performance of Al2O3-water nanofluids through oblique fin heat sink microchannel (OFHS MC) was presented.
26 citations
TL;DR: In this article, the thermal characteristics of wafer-level packaged LEDs with multichips such as thermal resistance and junction temperature were investigated using both serial and matrix measurement methods, and the thermal properties of the waferlevel packaged LED with red, green, and blue multi-ichips were investigated.
Abstract: Wafer-level packaged light-emitting diodes (LEDs) are useful for the high-power applications such as back light unit and general solid-state lighting due to the compactness and integrated fabrication process. In this letter, wafer-level packaged LEDs with red, green, and blue multichips were fabricated, and the thermal characteristics of wafer-level packaged LEDs with multichips such as thermal resistance and junction temperature are investigated using both serial and matrix measurement methods.
26 citations
TL;DR: In this article, a simple measuring method was proposed to predict T c using a thermocouple junction (copper constantan, type-T) adhered directly to the cover surface.
26 citations
TL;DR: In this paper, the temperature difference and thermal contact resistance between a thermocouple and the body to which it is attached have been calculated for a realistic low temperature configuration, and the fractional error was approximately 3W x W w where Wx is the thermal resistance of the body and WW the thermal resistances of the wire between the points of contact.
26 citations
29 Oct 2015
TL;DR: In this article, an improved thermal couple impedance model for a real multi-chip IGBT module in the power converter of a 2MW doubly fed induction generator (DFIG) wind turbine was proposed.
Abstract: With the development of large capacity variable speed constant frequency wind turbines, wind power converters with the multi-chip paralleled insulated gate bipolar transistor (IGBT) modules are widely used as an energy flow interface, a valid junction temperature calculation is vital considering the multichip electro-thermal influences, because thermal analysis is of great significance in terms of safe operation and reliability for the wind power converter. Focusing on the multi-chip thermal coupling effects, this paper proposes an improved thermal couple impedance model for a real multi-chip IGBT module in the power converter of a 2MW doubly fed induction generator (DFIG) wind turbine. First, the steady state junction temperature and thermal coupling profiles are analyzed by using finite element method (FEM). Second, by introducing into the equivalent thermal couple impedance matrix, an improved electro-thermal model is derived. Finally, junction temperatures of chips in different position are calculated by using the improved thermal coupling impedance model, and the results are further compared with those of the traditional thermal model and real tested case temperatures of the 2MW DFIG. Results show that the improved thermal model is much more valid than the traditional model for the thermal analysis of the multi-chip paralleled power module in the wind turbine power converter, and junction temperatures of the chips in non-edge position could be higher and this should be carefully considered in design and operational management control.
26 citations