Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.

Influence of thermal cross-couplings on power cycling lifetime of IGBT power modules

Abstract: Power cycling lifetime in a semiconductor module accounts for the progressive fatigue of the device due to repetitive thermo-mechanical stress. Mathematical models for the lifetime express the number of cycles that the device can withstand before failing under predefined repetitive conditions. These models reveal an exponential dependency of the lifetime with the amplitude of the swings of the chips junction temperature. Thus, an accurate estimation of the lifetime requires a precise knowledge of these temperature swings. During the design phase, the junction temperature time course over time is derived from the device losses with models of the thermal propagation inside the device package. The standard approach is based on discrete thermal models synthesized as a Cauer or Foster network equivalent. More advanced modelling techniques rely on Finite Element Methods (FEM). The paper compares three common thermal modelling approaches regarding their influence on lifetime prediction. In particular, it is demonstrated that these thermal models can present significant differences in predicting the cross couplings terms between the chips in the same module.

Electro-thermal modeling of SiC power devices for circuit simulation

Abstract: The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both static and dynamic models are formulated by curve fitting. Some simplifications are introduced during modeling to improve convergence and simulation speed. An all-SiC boost converter is also analyzed by simulation to evaluate the models.

A Real-Time Adaptive IGBT Thermal Model Based on an Effective Heat Propagation Path Concept

Abstract: The information of junction temperature is crucial for the operational management of insulated-gate bipolar transistor (IGBT) modules. In practice, the junction temperature is typically estimated by using an electrothermal model. IGBT modules are subject to various aging processes during operation, some of which, e.g., substrate solder crack, change the thermal impedance of the IGBT module. However, few works in the literature have included the aging effect on the online thermal behavior modeling of IGBT modules. This article proposes an effective heat propagation path (EHPP)-based real-time adaptive thermal model for IGBT modules, where the EHPP is proposed to quantify the impact of substrate solder cracks on the heat propagation inside the IGBT modules. A straightforward relationship between substrate solder crack and the degree of nonuniformity of case temperature distribution is established. This relationship is then used to approximate the EHPP of the IGBT module in different substrate solder health conditions in real time using the measured nonuniformity of case temperature distribution. Based on the change of the EHPP, the parameters of a thermal equivalent circuit (TEC) model, e.g., an improved Cauer-type TEC, are adjusted online and in real time to track the thermal behavior changes of the IGBT modules caused by substrate solder cracks, leading to a real-time substrate-solder-aging-adaptive thermal model. The proposed real-time adaptive thermal model is validated by simulation studies and experimental tests for a commercial IGBT module.

Implementation and validation of a physics-based circuit model for IGCT with full temperature dependencies

Abstract: This paper presents a physics-based Fourier solution IGCT model for circuit simulation with full temperature dependencies. Besides the external electrical characteristics, the model can also provide internal physical and electrical information of the device, such as the junction temperature, and the charge distribution. The model is shown to give good agreement with experimental waveforms and accurately predicts the device behavior under changing temperatures.

Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L

Abstract: A forced-air-cooled three-phase inverter built with SiC-JFETs and -SBDs as power semi-conductor devices was designed and fabricated. The inverter can operate steadily at a rated power of 10 kW in a junction temperature range up to 200°C. Output power density of more than 20 kW/L was achieved. The design specifications, the power module fabrication process, the results of a high-temperature operating test and a continuous switching test are described in turn.