Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.

Heat dissipation of printed circuit board by the high thermal conductivity of photo-imageable solder resist

Abstract: Thermal management issues with IC packages have been growing as electronic systems have become smaller with a higher functionality. Since the high junction temperature of IC packages induces the low performance and malfunction of electronic systems, the thermal dissipation capability of electronics is important for stable electrical performance and electro-mechanical reliability. However, the conventional cooling methods that depend on air flow path and heat sink structure is not sufficient to meet the growing thermal requirements of IC packages. Since there is limit on conventional design, such as optimization air flow path and heat sink structure, to dissipate more heat through an exhaust fan system. The main purpose of the present research is to reduce the junction temperature of the IC package by using a Printed Circuit Board (PCB) coated with new Photo-imageable Solder Resist (PSR) that has high thermal conductivity. The thermal conductivity of the newly developed PSR is about five times as high as that of the conventional PSR for PCB(0.23∼0.25W/m·K). The PCB was prepared by the EIA/JEDEC standard, JESD51-7. Experimental and finite element analyses were performed to investigate the effect of SR on thermal dissipation capability. The experimental and FE results show that the high thermal conductivity of PSR can reduce the steady-status regulator surface temperature by about 3∼8K as an air flow conditions around PCB. Also, the high thermal conductivity of SR is more effective under a low air heat transfer coefficient condition. Therefore, it is believed that an improved heat transfer with a PSR of high thermal conductivity should provide stable electrical performance for the IC package.

Direct Phase-Change Cooling of Vapor Chamber Integrated With IGBT Power Electronic Module for Automotive Application

Abstract: In electric vehicles and hybrid electric vehicles, insulated-gate bipolar transistor (IGBT) power module trends to dissipate higher heat flux due to increased power rating and reduced package size. An inefficient cooling method will result in stringent thermal reliability problems. Therefore, there is a strong need for innovative and efficient cooling technologies in order to tackle these issues. In this article, a localized direct phase-change cooling strategy is applied and integrated with direct bonded copper in IGBT power module. Vapor chamber with light weight, high thermal conductivity, and even temperature uniformity replaces original copper baseplate. Layers of thermal grease and original cooling plate are removed, leading to a further reduction in thermal resistance. In order to evaluate the new module, a thermal model and an experiment were built to analyze temperature distribution in layers, junction temperature, temperature uniformity, and thermal resistance. Results indicate the integrated thermal management system outperforms traditional cooling solutions on the cooling capacity. Improvements on junction temperature, temperature uniformity, and total thermal resistance are 34.6%, 76.6%, and 41.6%, respectively. The results illustrate the potential of phase-change cooling by vapor chamber. It provides a new perspective in the compact and efficient design of power electric modules.

Low switching loss, high power gate turn-off thyristors (GTOs) with n-buffer and new anode short structure

Abstract: 6000-V gate-turn-off thyristors (GTOs) were developed for high-voltage power converters. In order to attain a high blocking voltages simultaneously with low turn-on and turn-off switching losses, a combination of an n-buffer layer and a cylindrical-anode short structure was implemented. This structure is effective in sweeping away excess carriers during turn-off transient without increasing the on-state voltage. The device, fabricated on a 33 mm diameter wafer, can turn off an anode current greater than 700 A at a junction temperature of 125 degrees C. >

Electric-heat-aging junction temperature calculation model establishing method of IGBT module

Abstract: The invention relates to an electric-heat-aging junction temperature calculation model establishing method of an IGBT module. The method is technologically characterized by comprising the following steps of testing electric heating parameters of the IGBT module in different aging degrees, acquiring a three-dimensional relation curved surface and establishing an electric heating data sheet in different aging degrees; establishing an electric model of the IGBT module and a thermal network model of the IGBT module, inputting a power loss which is calculated through the electric model of the IGBT module into the thermal network model of the IGBT module in a current source manner, performing real-time feedback of the junction temperature which is calculated by the thermal network model to the electric model, and finishing establishment of an electric-heat coupling model of the IGBT module; performing aging state evaluation on the IGBT module; and performing junction temperature calculation on the IGBT module. According to the electric-heat-aging junction temperature calculation model establishing method, the corresponding electric heating parameters for different aging processes are acquired and furthermore the electric heating parameters are input into the electric-heat coupling model for performing junction temperature calculation, namely the parameter of the electric-heat coupling model is dynamically changed in real time according to the aging degree of the model, thereby realizing a junction temperature prediction function for the module aging degree.

Protection of power semiconductor components

Abstract: A method and a system for protecting the power semiconductor components used in the power stages of power electronics devices, such as frequency converters, wherein calculation modeling the degree of heating of the semiconductor junction of the power components (V11-V16) is used, wherein the degree of heating of the power components between the measurable outer surface or cooler and the internal semiconductor junction is determined on the basis of the dissipation power and a thermal network model of the component, wherein the temperature of the outer surface of the power component or the temperature of the cooler is measured, wherein the modeled temperature of the semiconductor junction is the sum of the measured temperature of the outer surface or cooler and the calculated degree of heating, and wherein, based on the modeled junction temperature, an alarm is issued or some other protective action is taken. In the method, the temperature of the semiconductor junction is calculated in real time, at least at time intervals equal to the shortest time constant in the thermal network model, on the basis of the heating caused by the dissipation power pulse produced during each current conduction cycle.