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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


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Proceedings ArticleDOI
04 Mar 2018
TL;DR: In this paper, the avalanche ruggedness of 10kV, 10A 4H-SiC MOSFETs is established experimentally using single shot unclamped inductive switching.
Abstract: Higher switching frequency capability and lower switching loss associated with 10kV 4H-SiC MOSFETs make them attractive for medium voltage applications, mostly in inductive circuits e.g. solid state transformers, grid connectors and high speed machine drives. Due to exposure to inductive circuits, avalanche ruggedness of these MOSFETs needs to be established to improve their reliability in case of unintended unclamped inductive switching. In this paper, the avalanche ruggedness of 10kV, 10A 4H-SiC MOSFETs is established experimentally using single shot unclamped inductive switching. The minimum and the maximum energy is found out for the MOSFET to remain in avalanche without being failed permanently. The junction temperature at the permanent failure is estimated using semiconductor device physics.

21 citations

Patent
14 Jul 1986
TL;DR: In this article, the junction-to-case thermal resistance of a hybrid circuit is determined by the quotient of the voltage across the junction and the product of P T and T c.
Abstract: A method and apparatus for determining the junction-to-case thermal resistance, θ jc , of a solid-state hybrid circuit element 38. First, the temperature coefficient, T c , of the voltage across the junction is determined with a small calibration current flowing through the junction. Digital multimeters 12 and 28 are used to measure the junction voltage and current, respectively. Next, more power is applied and the total power, P T , dissipated by the hybrid circuit element 38 is determined from values of the applied voltage and current measured with digital multimeters 12 and 14. The case of the hybrid element is kept at a constant temperature by a heat sink arrangement and the junction is allowed to reach thermal equilibrium at the higher power level. Finally, the increase in power to the hybrid element is removed and the change in junction voltage drop, ΔV BE , between low-power operation and high-power operation is determined using a storage oscilloscope 30. The junction-to-case thermal resistance, θ jc , is given by the quotient of ΔV BE and the product of P T and T c .

21 citations

Journal ArticleDOI
TL;DR: In this article, the extreme working temperature differences of combined thermoelectric devices were analyzed using nonequilibrium thermodynamics, and the effects of the hot junction temperature of the generator were analyzed.
Abstract: The extreme working temperature differences of combined thermoelectric devices, i.e. thermoelectric generator driven thermoelectric refrigerator or heat pump, are analysed using nonequilibrium thermodynamics. The extreme working temperature differences versus the ratio of numbers of thermoelectric elements, i.e. the ratio of the number of thermoelectric elements of the generator to the total number of thermoelectric elements of the combined devices, of the two models are obtained. The effects of the hot junction temperature of the generator on the extreme working temperature differences are analysed. The results show that, if a thermoelectric generator works under a condition of 150 K temperature difference, y60 K temperature difference for cooling or 200 K temperature difference for heating could be reached. The coefficient of performance can reach to 0?08–0?15 which is considerable for application in a wide scale for specific purposes. For a fixed ratio of numbers of thermoelectric elements, there is a fixed extreme working temperature difference, the larger working temperature difference, the smaller cooling (heating) load and coefficient of performance. The results obtained herein may provide guidelines for the design and application of practical combined thermoelectric devices.

21 citations

Proceedings ArticleDOI
17 Mar 2013
TL;DR: In this paper, a planar power module was developed, and a gate-driver circuit with an overcurrent protection was planned to integrate into the module, and the GMR sensor showed about 3.45% errors when it sensed 80 Adc and the operating temperature changed by 60°C.
Abstract: A planar power module was developed, and a gate-driver circuit with an over-current protection was planned to integrate into the module. After reviewing several current-sensing methods, the giant-magneto-resistive (GMR) sensor was chosen as a current-sensing method. However, there were several factors that hindered accurate measurement. The high junction temperature of the power dice gave high influence to the operating temperature of the GMR sensor, and the magnetic-flux distribution seen by the GMR sensor was also non-uniform due to skin effect. The temperature response of the GMR sensor was analyzed by experiments, and the GMR sensor showed about 3.45% errors when it sensed 80 Adc and the operating temperature changed by 60°C. To further improve the measurement capability over wide range of operating temperature, an active temperature-compensation method is described. The optimal position of the GMR sensor was found based on FEA simulation as the midpoint of two current paths. At that location, the GMR sensor could consistently sense both current excitations. A test module was fabricated, and preliminary measurement result showed excessive noise that had to be filtered out for accurate measurement. A signal-conditioning circuit was designed using an instrumentation amplifier, and the current measurement between the GMR sensor and a high-bandwidth current probe showed consistent result. The current sensor with signal-conditioning circuit was integrated into the gate-driver circuit, and the concept was verified by experiments.

21 citations

Journal ArticleDOI
TL;DR: In this article, the InGaN/GaN multiple quantum well vertical light-emitting diodes (VLEDs) operating at λ ~ 450 nm by the use of laser lift-off and copper electroplating processes are measured and analyzed in terms of the junction temperature (Tj) using the forward voltage method, which allows us to estimate the thermal resistance (Rth).
Abstract: We report the InGaN/GaN multiple quantum well vertical light-emitting diodes (VLEDs) operating at λ ~ 450 nm by the use of laser lift-off and copper electroplating processes. The thermal characteristics of fabricated VLEDs are measured and analyzed in terms of the junction temperature (Tj) using the forward voltage method, which allows us to estimate the thermal resistance (Rth). Between 298 and 378 K, the characteristic temperature is measured to be about 903 K at 350 mA. The far-field patterns of the VLED have a uniform and good near-Lambertian emission. The Tj and Rth values are also confirmed by the emission peak wavelength shift method. The use of electroplated copper with a high thermal conductivity instead of a sapphire substrate provides much better heat dissipation capability. For a 1 × 1 mm2 VLED, the low Tj value of 305.8 K is obtained with an output power of 191 mW at an injection current of 350 mA at 298 K, exhibiting Rth = 7.98 K W−1.

21 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303