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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


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Proceedings ArticleDOI
18 Apr 2011
TL;DR: In this paper, a methodology to predict the degradation of the epoxy lens has been proposed to correlate the mean time to failure as a function of the junction temperature and the inputted voltage.
Abstract: Due to their long lifetime and high efficacy, solid state lighting (SSL) has the potential to revolutionize the illumination industry. The long lifetime claimed by the manufacturers is often based solely on the estimated depreciation of lumen for a single LED operating at 25°C. However, self heating and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of light emitting diode. Furthermore, each SSL system includes different components such as the optical part, electrical driver and interconnections. The failure/degradation of any components wills severely affects the performance and reliability of whole system and hence the weakest component will become the bottleneck for the reliability and lifetime of the module. Literature reviews of the factors influencing the life of LED lamps identified the degradation of the epoxy lens and plastic package due to the junction temperature and voltages as one of the common failure mode. In this research, a methodology to predict the degradation of the epoxy lens has been proposed. In order to correlate the mean time to failure as a function of the junction temperature and the inputted voltage, the simplified Eyring models had been proposed in this research. Since the life of a SSL system is subjected to varying loading condition, another objectives of this research is to present a methodology to predict the life of a SSL under changing condition.

21 citations

Journal ArticleDOI
TL;DR: In this paper, a gate model of SiC MOSFET is proposed, and based on this model, an I G-based junction temperature estimation technique is presented, which can be used in various types of power electronics devices.
Abstract: Junction temperature monitoring is the basis of high reliability for silicon carbide (SiC) devices since thermal stress is the dominating aging factor. Due to the high switching frequency, conventional thermal-sensitive electrical parameter (TSEP) methods have poor monitoring performance for SiC MOSFETs. The gate current I G has been found as an effective TSEP for SiC MOSFETs. However, the exact relationship between the I G and the junction temperature and its fundamental principle has not yet been fully revealed. Moreover, existing monitoring methods based on the I G are limited to specific devices and require a complex measuring system. In order to solve the problems above, this article puts forward a novel junction temperature monitoring method based on the I G. First, a gate model of SiC MOSFET is proposed. Second, based on this model, an I G-based junction temperature estimation technique is presented. Third, an online measuring method for the I G is proposed. Finally, online experiments validate the proposed method. This novel method has three advantages. First, it can be used in various types of power electronics devices. Second, it can provide decent precision in various working conditions. Third, the measurement circuit required by his method is simple, which adds no additional hardware.

21 citations

Proceedings ArticleDOI
18 Nov 2016
TL;DR: The goal of the project is to develop a standardized method to create multi-domain LED compact models from testing data, capable of proper prediction of LED operation but simple enough to assure fast numerical simulations.
Abstract: There are a few bottlenecks hampering efficient design of products on different integration levels of the SSL supply chain. One major issue is that data sheet information provided about packaged LEDs is usually insufficient and inconsistent among different LED vendors. Many data such as temperature sensitivity of different light output properties are provided to a limited extent only and usually by means of plots. Also, reported light output properties are typically rated for a junction temperature of 25 °C, which is obviously much below the junction temperature expected under real operating conditions. Even if “hot lumens” measured at a junction temperature of 85 °C this is not the actual operating temperature and there is little information about how such “hot lumen” tests are performed. The gap between and reported LED test data and actual operating conditions can be bridged by proper simulation models of LEDs and their environments. Such models should be accurate, hence capable of proper prediction of LED operation but simple enough to assure fast numerical simulations. However, LED integration do not get access to detailed LED information to perform those simulation at system level, thus perform reverse engineering which is time and cost consuming. A bridge, in the form of standardization, has to be established between the semiconductor industry and the LED component integrators. In order to achieve this, the following tools have to be provided: • Generic, multi-domain model of LED chips • Compact thermal model of the LED chips ‘environment (including the package and module assembly)’ Modeling interface towards the luminaire The goal of the project is to develop a standardized method to create multi-domain LED compact models from testing data.

21 citations

Proceedings ArticleDOI
02 Oct 1994
TL;DR: In this article, the implementation and limitation of thermosensitive parameters when predicting junction temperature in a hybrid module is discussed and some remedies are presented for this purpose, which shows that equivalent temperature predicted by these parameters is not a simple average of individual chip temperature but is rather near to the hottest one.
Abstract: In this paper, implementation and limitation of thermosensitive parameters when predicting junction temperature in a hybrid module is discussed and some remedies are presented for this purpose. The results obtained by applying two important thermosensitive parameters of an IGBT show that equivalent temperature predicted by these parameters is not a simple average of individual chip temperature but is rather near to the hottest one. The results of different tests are presented and a generalized method (temperature sensitive parameter method) for using these parameters is explained. >

21 citations

Proceedings ArticleDOI
15 Nov 2004
TL;DR: In this paper, integrated micro-channel cooling, directly underneath an electronic circuit, for on-chip cooling with forced water convection has been investigated both theoretically and experimentally, and the minimum thermal resistance, which is measured, is 0.08 K/W for a power dissipation of 428 W at a flow rate of 1 l/min.
Abstract: Integrated micro-channel cooling, directly underneath an electronic circuit, for on-chip cooling with forced water convection has been investigated both theoretically and experimentally. In a 1-cm/sup 2/ experimental device, 370 W was dissipated without exceeding the critical junction temperature of 120/spl deg/C at a flow rate of only 0.1 l/min and a pressure drop of 0.15 bar. The minimum thermal resistance, which is measured, is 0.08 K/W for a power dissipation of 428 W at a flow rate of 1.1 l/min. This more than satisfies the requirements for cooling of next generation CPUs.

21 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303