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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


Papers
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Journal ArticleDOI
TL;DR: This paper adopts the Bayerer lifetime model to evaluate the consumed lifetime of power semiconductors in wind power converter systems based on a numerical junction temperature calculation method and shows that fluctuations of the ambient temperature increase the consumed life due to the low frequency thermal cycling, but have little effect on the fundamental frequency Thermal cycling.

20 citations

Journal ArticleDOI
TL;DR: It was found that AlN TIM achieve less LED junction temperature by a difference of 2.20 °C compared to BN filled TIM and the AlN at D 50 = 1170 nm was found to exhibit the lowest junction temperature and the lowest total thermal resistance compared to the other two fillers.

20 citations

Journal ArticleDOI
TL;DR: This study comparatively reviews the condition monitoring methods presented so far and gives directions on the future steps that should be addressed by research in this area.
Abstract: The majority of electrical failures in wind turbines occur in the generator-side semiconductor devices. This is due to temperature swings affecting the layers of insulated-gate bipolar transistors in different ways; these effects are aggravated by the variation of wind speed. The implementation of accurate on-line condition monitoring mainly relies on on-line tracking of the temperature variation of components. The maximum temperature stress is observed at the junction terminal of the devices, which cannot be easily measured. Additionally, it is difficult to track the exact dynamic of temperature due to the slow response of sensors. Thus, several methods have been presented in the technical literature to estimate the junction temperature of the semiconductor devices. Each method has merits and disadvantages in terms of accuracy and complexity, as failure mechanisms have their own effects on the variation of junction temperature and some or all of the electrical parameters. Therefore, detection algorithms have to determine the root cause of the temperature variation. This study comparatively reviews the condition monitoring methods presented so far and gives directions on the future steps that should be addressed by research in this area.

20 citations

Journal ArticleDOI
Han Rong1, Qianming Xu1, Ding Hongqi, Guo Peng1, Hu Jiayu1, Yandong Chen1, An Luo1 
TL;DR: A model predictive control based on the thermal stress balance of a modular multilevel switching power amplifier with high power and high output performance is proposed and verified by the simulation and the experimental results.
Abstract: Power amplifiers have a wide range of applications in civilian and military areas. In this article, a modular multilevel switching power amplifier (MMSPA) with high power and high output performance is investigated. Due to mismatched parameters or proper control signals among the modules, there may be significant temperature differences among the modules of MMSPA under long-term operations. Uneven temperatures among modules directly lead to premature aging and failure, which in turn affects the overall system reliability. Aiming at the thermal stress imbalance among modules of MMSPA, a model predictive control based on the thermal stress balance is proposed. First, the mathematical model is constructed for the MMSPA. Then, the junction temperature estimation method based on the power loss calculation is presented. On this basis, the finite set control switch state optimization and the switch distribution algorithm for thermal balance are presented. Finally, the proposed active thermal control is verified by the simulation and the experimental results.

20 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303